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5ASXFB5H4F40I3N 参数 Datasheet PDF下载

5ASXFB5H4F40I3N图片预览
型号: 5ASXFB5H4F40I3N
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 670MHz, PBGA1517, ROHS COMPLIANT, FBGA-1517]
分类和应用: 可编程逻辑
文件页数/大小: 40 页 / 886 K
品牌: ALTERA [ ALTERA CORPORATION ]
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AV-51001  
2015.12.21  
2
Summary of Arria V Features  
Advantage  
Supporting Feature  
Lowest system cost  
Requires as few as four power supplies to operate  
Available in thermal composite flip chip ball-grid array (BGA) packaging  
Includes innovative features such as Configuration via Protocol (CvP),  
partial reconfiguration, and design security  
Summary of Arria V Features  
Table 2: Summary of Features for Arria V Devices  
Feature  
Description  
Technology  
TSMC's 28-nm process technology:  
Arria V GX, GT, SX, and ST—28-nm low power (28LP) process  
Arria V GZ—28-nm high performance (28HP) process  
Lowest static power in its class (less than 1.2 W for 500K logic elements (LEs) at  
85°C junction under typical conditions)  
0.85 V, 1.1 V, or 1.15 V core nominal voltage  
Packaging  
Thermal composite flip chip BGA packaging  
Multiple device densities with identical package footprints for seamless migration  
between different device densities  
Leaded(1), lead-free (Pb-free), and RoHS-compliant options  
High-performance  
FPGA fabric  
Enhanced 8-input ALM with four registers  
Improved routing architecture to reduce congestion and improve compilation time  
Internal memory  
blocks  
M10K—10-kilobits (Kb) memory blocks with soft error correction code (ECC)  
( Arria V GX, GT, SX, and ST devices only)  
M20K—20-Kb memory blocks with hard ECC ( Arria V GZ devices only)  
Memory logic array block (MLAB)-640-bit distributed LUTRAM where you can  
use up to 50% of the ALMs as MLAB memory  
(1)  
Contact Altera for availability.  
Arria V Device Overview  
Send Feedback  
Altera Corporation