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LX1992-01EVALKIT 参数 Datasheet PDF下载

LX1992-01EVALKIT图片预览
型号: LX1992-01EVALKIT
PDF下载: 下载PDF文件 查看货源
内容描述: LED驱动器\n [LED Driver ]
分类和应用: 驱动器
文件页数/大小: 11 页 / 346 K
品牌: ETC [ ETC ]
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LX1992  
High Efficiency LED Driver  
L I N F I N I T Y D I V I S I O N  
PRODUCTION  
APPLICATION INFORMATION  
PCB LAYOUT  
formula for VDROOP is:  
The LX1992 produces high slew-rate voltage and current  
waveforms hence; the designer should take this into  
consideration when laying out the circuit. Minimizing trace  
lengths from the IC to the inductor, transistor, diode, input  
and output capacitors, and feedback connection (i.e., pin 6)  
are typical considerations. Moreover, the designer should  
maximize the DC input and output trace widths to  
accommodate peak current levels associated with this  
topology.  
L
×  
(
IPK × IOUT  
)
= COUT  
VDROOP  
(
VIN 0.5)  
The output overshoot can be estimated as follows where the  
0.5 value in the denominator is an estimate of the voltage  
drop across the diode:  
L
2
1
×
×
IPK IOUT  
( )  
2
EVALUATION BOARD  
COUT  
VOVERSHOOT  
DESIGN EXAMPLE:  
Determine the VRIPPLE where IPK equals 200mA, IOUT  
equals 12.8mA, L equals 47µH, COUT equals 4.7µF, VIN  
equals 3.0V, and VOUT equals 13.0V:  
=
The LXE1992 evaluation board is available from  
Microsemi for assessing overall circuit performance. The  
evaluation board, shown in Figure 3, is 3 by 3 inches (i.e.,  
7.6 by 7.6cm) square and programmed to drive 4 LEDs  
(provided). Designers can easily modify circuit parameters  
to suit their particular application by replacing RCS (as  
described in this section) RSET (i.e., R4) and diode load.  
Moreover, the inductor, FET, and switching diode are easily  
swapped out to promote design verification of a circuit that  
maximizes efficiency and minimizes cost for a specific  
(
VOUT + 0.5 V  
)
IN  
47µH  
4.7µF  
×
200mA×12.8mA  
( )  
VDROOP  
=
10.2mV  
(
3.0 0.5)  
application.  
The evaluation board input and output  
47µH  
4.7µF  
2
1
connections are described in Table 1.  
×
2
×
(
200mA 12.8mA  
)
The DC input voltage is applied to VBAT (not VCC)  
however the LX1992 IC may be driven from a separate DC  
source via the VCC input. The output current (i.e., LED  
brightness) is controlled by adjusting the on-board  
VOVERSHOOT  
=
18.4mV  
(
13.0 + 0.5 3.0)  
Therefore, VRIPPLE = 10.2mV + 18.4mV + 10mV = 38.6mV  
DIODE SELECTION  
potentiometer.  
The designer may elect to drive the  
brightness adjustment circuit from VBAT or via a separate  
voltage source by selecting the appropriate jumper position  
(see Table 2). Optional external adjustment of the output  
LED current is achieved by disengaging the potentiometer  
and applying either a DC voltage or a PWM-type signal to  
the VADJ input. The PWM signal frequency should be  
higher than 150KHz and contain a DC component les than  
350mV.  
A Schottky diode is recommended for most applications  
(e.g. Microsemi UPS5817). The low forward voltage drop  
and fast recovery time associated with this device supports  
the switching demands associated with this circuit  
topology. The designer is encouraged to consider the  
diode’s average and peak current ratings with respect to  
the application’s output and peak inductor current  
requirements. Further, the diode’s reverse breakdown  
voltage characteristic must be capable of withstanding a  
The LX1992 exhibits a low quiescent current (IQ < 0.5µA:  
typ) during shutdown mode. The SHDN pin is used to  
exercise the shutdown function on the evaluation board.  
This pin is pulled-up to VCC via a 10Kresistor.  
Grounding the SHDN pin shuts down the IC (not the circuit  
output). The output voltage (i.e., voltage across the LED  
string) is readily measured at the VOUT terminal and LED  
current is derived from measuring the voltage at the VFDBK  
pin and dividing this value by 15(i.e., R4).  
negative voltage transition that is greater than VOUT  
.
TRANSISTOR SELECTION  
The LX1992 can source up to 100mA of gate current.  
An N-channel MOSFET with a relatively low threshold  
voltage, low gate charge and low RDS(ON) is required to  
optimize overall circuit performance. The LXE1992  
Evaluation Board uses a Fairchild FDV303. This NMOS  
device was chosen because it demonstrates an RDS_ON of  
0.33and a total gate charge Qg of 1.64nC (typ.)  
The factory installed component list for this must-have  
design tool is provided in Table 3 and the schematic is  
shown in Figure 4  
Copyright 2000  
Rev. 1.1, 2002-11-21  
Microsemi  
Page 6  
Linfinity Microelectronics Division  
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570  
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