欢迎访问ic37.com |
会员登录 免费注册
发布采购

CY7C1347C-250BGC 参数 Datasheet PDF下载

CY7C1347C-250BGC图片预览
型号: CY7C1347C-250BGC
PDF下载: 下载PDF文件 查看货源
内容描述: X36高速同步SRAM [x36 Fast Synchronous SRAM ]
分类和应用: 内存集成电路静态存储器时钟
文件页数/大小: 24 页 / 294 K
品牌: ETC [ ETC ]
 浏览型号CY7C1347C-250BGC的Datasheet PDF文件第3页浏览型号CY7C1347C-250BGC的Datasheet PDF文件第4页浏览型号CY7C1347C-250BGC的Datasheet PDF文件第5页浏览型号CY7C1347C-250BGC的Datasheet PDF文件第6页浏览型号CY7C1347C-250BGC的Datasheet PDF文件第8页浏览型号CY7C1347C-250BGC的Datasheet PDF文件第9页浏览型号CY7C1347C-250BGC的Datasheet PDF文件第10页浏览型号CY7C1347C-250BGC的Datasheet PDF文件第11页  
CY7C1347C/GVT71128DA36  
CY7C1327C/GVT71256DA18  
Truth Table[2, 3, 4, 5, 6, 7, 8]  
Address  
Used  
Operation  
CE CE2 CE2 ADSP ADSC  
ADV  
X
X
X
X
X
X
X
X
X
X
L
WRITE OE  
CLK  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
DQ  
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
Q
Deselected Cycle, Power Down  
Deselected Cycle, Power Down  
Deselected Cycle, Power Down  
Deselected Cycle, Power Down  
Deselected Cycle, Power Down  
READ Cycle, Begin Burst  
None  
None  
H
L
X
X
H
X
H
L
X
L
X
L
L
X
X
L
X
X
X
X
X
X
X
L
X
X
X
X
X
L
None  
L
X
L
L
None  
L
H
H
L
None  
L
X
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
L
External  
External  
External  
External  
External  
Next  
L
X
X
L
READ Cycle, Begin Burst  
L
L
L
H
X
L
High-Z  
D
WRITE Cycle, Begin Burst  
READ Cycle, Begin Burst  
L
L
H
H
H
H
H
X
X
H
X
H
H
X
X
H
X
L
L
L
H
H
H
H
H
H
L
Q
READ Cycle, Begin Burst  
L
L
L
H
L
High-Z  
Q
READ Cycle, Continue Burst  
READ Cycle, Continue Burst  
READ Cycle, Continue Burst  
READ Cycle, Continue Burst  
WRITE Cycle, Continue Burst  
WRITE Cycle, Continue Burst  
READ Cycle, Suspend Burst  
READ Cycle, Suspend Burst  
READ Cycle, Suspend Burst  
READ Cycle, Suspend Burst  
WRITE Cycle, Suspend Burst  
WRITE Cycle, Suspend Burst  
X
X
H
H
X
H
X
X
H
H
X
H
X
X
X
X
X
X
X
X
X
X
X
X
H
H
H
H
H
H
H
H
H
H
H
H
Next  
L
H
L
High-Z  
Q
Next  
L
Next  
L
H
X
X
L
High-Z  
D
Next  
L
Next  
L
L
D
Current  
Current  
Current  
Current  
Current  
Current  
H
H
H
H
H
H
H
H
H
H
L
Q
H
L
High-Z  
Q
H
X
X
High-Z  
D
L
D
Partial Truth Table for READ/WRITE[9]  
FUNCTION  
GW  
H
BWE  
BWa  
BWb  
BWc  
X
BWd  
READ  
READ  
H
L
L
L
X
X
H
L
X
H
H
L
X
H
H
L
H
H
WRITE one byte  
WRITE all bytes  
H
H
H
L
L
WRITE all bytes  
L
X
X
X
X
Note:  
2. X means dont care.H means logic HIGH. L means logic LOW.  
For X36 product, WRITE = L means [BWE + BWa*BWb*BWc*BWd]*GW equals LOW. WRITE = H means [BWE + BWa*BWb*BWc*BWd]*GW equals HIGH.  
For X18 product, WRITE = L means [BWE + BWa*BWb]*GW equals LOW. WRITE = H means [BWE + BWa*BWb]*GW equals HIGH.  
3. BWa enables write to DQa. BWb enables write to DQb. BWc enables write to DQc. BWd enables write to DQd.  
4. All inputs except OE must meet set-up and hold times around the rising edge (LOW to HIGH) of CLK.  
5. Suspending burst generates wait cycle.  
6. For a write operation following a read operation, OE must be HIGH before the input data required set-up time plus High-Z time for OE and staying HIGH  
throughout the input data hold time.  
7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up.  
8. ADSP LOW along with chip being selected always initiates a READ cycle at the L-H edge of CLK. A WRITE cycle can be performed by setting WRITE LOW  
for the CLK L-H edge of the subsequent wait cycle. Refer to WRITE timing diagram for clarification.  
9. For X18 product, there are only BWa and BWb.  
7
 复制成功!