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AN-32 参数 Datasheet PDF下载

AN-32图片预览
型号: AN-32
PDF下载: 下载PDF文件 查看货源
内容描述: TOPSwitch-GX的反激式设计方法\n [TOPSwitch-GX Flyback Design Methodology ]
分类和应用:
文件页数/大小: 16 页 / 134 K
品牌: ETC [ ETC ]
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AN-32  
Step 30. Select output rectifier per Table 9  
Step 31. Select output capacitor  
• VR 1.25 xPIVS; where PIVS is from Step 28 and VR is the  
rated reverse voltage of the rectifier diode.  
• ID 3 x IO; where ID is the diode rated DC current and  
IO = PO / VO.  
• Ripple current specification at 105 °C, 100 kHz: Must be  
equal to or larger than IRIPPLE, where IRIPPLE is from Step 27.  
• ESR specification: Use low ESR, electrolytic capacitor.  
Output switching ripple voltage is ISP x ESR , where ISP is  
from Step 24.  
Rec. Diode VR(V) ID(A) Package Manufacturer  
Examples:  
Schottky  
1N5819  
SB140  
Output  
Output Capacitor  
40  
40  
60  
60  
60  
40  
40  
40  
60  
60  
40  
60  
45  
1
1
1
1
1.1  
3
3
3
3
3
Axial General Semi  
Axial General Semi  
Axial General Semi  
Axial IR  
5 V to 24 V, 1 A 330 µF, 35 V, low ESR, electrolytic  
SB160  
MBR160  
11DQ06  
1N5822  
SB340  
MBR340  
SB360  
MBR360  
SB540  
SB560  
UnitedChemicon  
Axial IR  
LXZ35VB331M10X16LL  
Rubycon 35YXG330M10x16  
Panasonic EEUFC1V331  
Axial General Semi  
Axial General Semi  
Axial IR  
Axial General Semi  
Axial IR  
Axial General Semi  
Axial General Semi  
TO-220 General Semi  
IR  
5 V to 24 V, 2 A 1000 µF, 35 V, low ESR, electrolytic  
United Chemicon  
5
5
7.5  
LXZ35VB102M12X25LL  
Rubycon 35YXG1000M12.5x25  
Panasonic EEUFC1V102  
MBR745  
MBR760  
MBR1045  
60  
45  
7.5  
10  
TO-220 General Semi  
TO-220 General Semi  
IR  
TO-220 General Semi  
TO-220 General Semi  
TO-220 General Semi  
IR  
Step 32.  
Select output post filter L, C  
• Inductor L: 2.2 µH to 4.7 µH. Use ferrite bead for low  
current (1A) output and standard off-the-shelf choke for  
highercurrentoutput. Increasechokecurrentratingorwire  
size, if necessary, to avoid significant DC voltage drop.  
• Capacitor C:100 µF to 330 µF, 35 V, electrolytic  
MBR1060  
MBR10100  
MBR1645  
60  
100  
45  
10  
10  
16  
MBR1660  
60  
16  
TO-220 General Semi  
Examples for 100 µF, 35 V, electrolytic:  
MBR2045CT 45 20(2x10) TO-220 General Semi  
United Chemicon KMG35VB101M6X11LL  
Rubycon 35YXA100M6.3x11  
IR  
MBR2060CT 60 20(2x10) TO-220 General Semi  
Panasonic ECA1VHG101  
MBR20100  
100 20(2x10) TO-220 General Semi  
IR  
Step 33. Select bias rectifier from Table 10  
UFR  
UF4002  
UF4003  
MUR120  
EGP20D  
100  
200  
200  
200  
1
1
1
2
2
Axial General Semi  
Axial General Semi  
Axial General Semi  
Axial General Semi  
Axial General Semi  
Philips  
Axial General Semi  
Axial General Semi  
Axial General Semi  
Axial General Semi  
Philips  
TO-220 General Semi  
TO-220 General Semi  
Philips  
TO-220 General Semi  
Philips  
• VR 1.25 xPIVB; where PIVB is from Step 28 and VR is the  
rated reverse voltage of the rectifier diode.  
Rectifier  
VR (V)  
Manufacturer  
BYV27-200 200  
BAV21  
UF4003  
1N4148  
200  
200  
75  
Philips  
General Semi  
Motorola  
UF5401  
UF5402  
EGP30D  
100  
200  
200  
3
3
3
Table 10.  
BYV28-200 200  
3.5  
Step 34. Select bias capacitor  
MUR420 200  
4
8
BYW29-200 200  
BYV32-200 200  
• Use 0.1 µF, 50 V, ceramic.  
18  
Step 35. SelectCONTROLpincapacitorandseriesresistor  
• CONTROLpincapacitor:47µF,10V,lowcostelectrolytic  
Table 9.  
(Do not use low ESR capacitor).  
B
12/02  
13  
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