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X51638S8-1.8 参数 Datasheet PDF下载

X51638S8-1.8图片预览
型号: X51638S8-1.8
PDF下载: 下载PDF文件 查看货源
内容描述: SPI串行EEPROM与监控功能\n [SPI Serial EEPROM with Supervisory Features ]
分类和应用: 光电二极管监控可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 21 页 / 102 K
品牌: ETC [ ETC ]
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X51638  
Setting the WP pin LOW while WPEN is a “1” while an  
internal write cycle to the Status Register is in progress  
will not stop this write operation, but the operation dis-  
ables subsequent write attempts to the Status Register.  
must then be taken HIGH. If the user continues the Write  
Operation without taking CS HIGH after issuing the  
WREN instruction, the Write Operation will be ignored.  
To write data to the EEPROM memory array, the user  
then issues the WRITE instruction followed by the 16 bit  
address and then the data to be written. Any unused  
address bits are specified to be “0’s”. The WRITE opera-  
tion minimally takes 32 clocks. CS must go low and  
remain low for the duration of the operation. If the  
address counter reaches the end of a page and the clock  
continues, the counter will roll back to the first address of  
the page and overwrite any data that may have been pre-  
viously written.  
When WP is HIGH, all functions, including nonvolatile  
writes to the Status Register operate normally.  
Setting the WPEN bit in the Status Register to “0” blocks  
the WP pin function, allowing writes to the Status Regis-  
ter when WP is HIGH or LOW. Setting the WPEN bit to  
“1” while the WP pin is LOW activates the Programmable  
ROM mode, thus requiring a change in the WP pin prior  
to subsequent Status Register changes. This allows  
manufacturing to install the device in a system with WP  
pin grounded and still be able to program the Status Reg-  
ister. Manufacturing can then load Configuration data,  
manufacturing time and other parameters into the  
EEPROM, then set the portion of memory to be pro-  
tected by setting the Block Lock bits, and finally set the  
“OTP mode” by setting the WPEN bit. Data changes now  
require a hardware change.  
For the Page Write Operation (byte or page write) to be  
completed, CS can only be brought HIGH after bit 0 of  
the last data byte to be written is clocked in. If it is brought  
HIGH at any other time, the write operation will not be  
completed (Figure 4).  
To write to the Status Register, the WRSR instruction is  
followed by the data to be written (Figure 5). Data bits 0  
and 1 must be “0” .  
Read Sequence  
When reading from the EEPROM memory array, CS is  
first pulled low to select the device. The 8-bit READ  
instruction is transmitted to the device, followed by the  
16-bit address. After the READ opcode and address are  
sent, the data stored in the memory at the selected  
address is shifted out on the SO line. The data stored in  
memory at the next address can be read sequentially by  
continuing to provide clock pulses. The address is auto-  
matically incremented to the next higher address after  
each byte of data is shifted out. When the highest  
address is reached, the address counter rolls over to  
address $0000 allowing the read cycle to be continued  
indefinitely. The read operation is terminated by taking  
CS high. Refer to the Read EEPROM Array Sequence  
(Figure 1).  
While the write is in progress following a Status Register  
or EEPROM Sequence, the Status Register may be read  
to check the WIP bit. During this time the WIP bit will be  
high.  
OPERATIONAL NOTES  
The device powers-up in the following state:  
• The device is in the low power standby state.  
• A HIGH to LOW transition on CS is required to enter  
an active state and receive an instruction.  
• SO pin is high impedance.  
• The Write Enable Latch is reset.  
• The Flag Bit is reset.  
• Reset Signal is active for t  
.
PURST  
To read the Status Register, the CS line is first pulled low  
to select the device followed by the 8-bit RDSR instruc-  
tion. After the RDSR opcode is sent, the contents of the  
Status Register are shifted out on the SO line. Refer to  
the Read Status Register Sequence (Figure 2).  
Data Protection  
The following circuitry has been included to prevent inad-  
vertent writes:  
• A WREN instruction must be issued to set the Write  
Enable Latch.  
Write Sequence  
Prior to any attempt to write data into the device, the  
“Write Enable” Latch (WEL) must first be set by issuing  
the WREN instruction (Figure 3). CS is first taken LOW,  
then the WREN instruction is clocked into the device.  
After all eight bits of the instruction are transmitted, CS  
• CS must come HIGH at the proper clock count in order  
to start a nonvolatile write cycle.  
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