NT5DS32M4AT
NT5DS16M8AT
128Mb Double Data Rate SDRAM
Electrical Characteristics & AC Timing for DDR266/DDR200 - Absolute Specifications
(0 °C £ TA £ 70 °C; VDDQ = 2.5V ± 0.2V; VDD = 2.5V ± 0.2V, See AC Characteristics) (Part 2 of 2)
DDR266A
DDR266B
DDR200
Min Max
Symbol
Parameter
Unit
Notes
Min
Max
Min
Max
t
Active to Precharge command
45
65
120,000
45
65
120,000
50
70
120,000 ns
ns
1-4
1-4
RAS
t
Active to Active/Auto-refresh command period
RC
Auto-refresh to Active/Auto-refresh
command period
t
75
75
80
ns
1-4
RFC
t
Active to Read or Write delay
20
20
20
15
15
20
20
20
15
15
20
20
20
15
15
ns
ns
ns
ns
ns
1-4
1-4
1-4
1-4
1-4
RCD
t
Active to Read Command with Autoprecharge
Precharge command period
RAP
t
RP
t
Active bank A to Active bank B command
Write recovery time
RRD
t
WR
(t
/t
(t /t
WR CK
(t
/t
WR CK
WR CK
Auto precharge write recovery
+ precharge time
)
+
)
+
)
+
t
t
t
1-4,16
DAL
CK
(t /t
RP CK)
(t /t
RP CK)
(t /t
RP CK)
t
Internal write to read command delay
Exit self-refresh to non-read command
Exit self-refresh to read command
Average Periodic Refresh Interval
QFC setup time on Read
1
1
1
1-4
1-4
WTR
CK
t
75
75
80
ns
XSNR
t
200
200
200
t
1-4
XSRD
CK
t
15.6
1.1
15.6
1.1
15.6
1.1
ms
1-4, 8
1-4, 15
1-4, 15
REFI
t
0.9
0.4
0.9
0.4
0.9
0.4
t
QCS
CK
CK
t
QFC hold time on Read
0.6
0.6
0.6
t
QCH
Delay from CK edge of write command to QFC
low on write
t
t
4.0
2.0
4.0
2.0
4.0
2.0
ns
ns
1-4, 9, 15
QCSW
QCHW
QFC hold time on write
1.25
1.25
1.25
1-4, 10, 15
59
REV 1.0
May, 2001
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NANYA TECHNOLOGY CORP. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
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