欢迎访问ic37.com |
会员登录 免费注册
发布采购

NT5DS16M8AT-7K 参数 Datasheet PDF下载

NT5DS16M8AT-7K图片预览
型号: NT5DS16M8AT-7K
PDF下载: 下载PDF文件 查看货源
内容描述: DDR同步DRAM [DDR Synchronous DRAM ]
分类和应用: 内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 76 页 / 1242 K
品牌: ETC [ ETC ]
 浏览型号NT5DS16M8AT-7K的Datasheet PDF文件第54页浏览型号NT5DS16M8AT-7K的Datasheet PDF文件第55页浏览型号NT5DS16M8AT-7K的Datasheet PDF文件第56页浏览型号NT5DS16M8AT-7K的Datasheet PDF文件第57页浏览型号NT5DS16M8AT-7K的Datasheet PDF文件第59页浏览型号NT5DS16M8AT-7K的Datasheet PDF文件第60页浏览型号NT5DS16M8AT-7K的Datasheet PDF文件第61页浏览型号NT5DS16M8AT-7K的Datasheet PDF文件第62页  
NT5DS32M4AT  
NT5DS16M8AT  
128Mb Double Data Rate SDRAM  
Electrical Characteristics & AC Timing for DDR266/DDR200 - Absolute Specifications  
(0 °C £ TA £ 70 °C; VDDQ = 2.5V ± 0.2V; VDD = 2.5V ± 0.2V, See AC Characteristics) (Part 1 of 2)  
DDR266A  
DDR266B  
DDR200  
Symbol  
Parameter  
Unit  
Notes  
Min  
Max  
Min  
Max  
Min  
Max  
+ 0.8  
+ 0.8  
t
DQ output access time from CK/CK  
DQS output access time from CK/CK  
CK high-level width  
- 0.75  
- 0.75  
0.45  
0.45  
7
+ 0.75  
+ 0.75  
- 0.75  
- 0.75  
0.45  
+ 0.75  
+ 0.75  
- 0.8  
- 0.8  
0.45  
0.45  
8
ns  
ns  
1-4  
1-4  
1-4  
1-4  
1-4  
AC  
t
DQSCK  
t
0.55  
0.55  
12  
0.55  
0.55  
12  
0.55  
0.55  
12  
t
t
CH  
CK  
CK  
t
CK low-level width  
0.45  
CL  
t
CL = 2.5  
7.5  
ns  
CK  
Clock cycle time  
7.5  
12  
t
CL = 2.0  
10  
12  
10  
12  
ns  
1-4  
CK  
10  
12  
t
t
DQ and DM input hold time  
DQ and DM input setup time  
0.5  
0.5  
0.5  
0.6  
0.6  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
1-4  
1-4  
DH  
DS  
0.5  
t
DQ and DM input pulse width (each input)  
Data-out high-impedance time from CK/CK  
Data-out low-impedance time from CK/CK  
DQS-DQ skew (DQS & associated DQ signals)  
DQS-DQ skew (DQS & all DQ signals)  
1.75  
- 0.75  
- 0.75  
1.75  
2
1-4  
DIPW  
t
+ 0.75  
+ 0.75  
+ 0.5  
- 0.75  
- 0.75  
+ 0.75  
+ 0.75  
+ 0.5  
- 0.8  
- 0.8  
+ 0.8  
+ 0.8  
+ 0.6  
+ 0.6  
1-4, 5  
1-4, 5  
1-4  
HZ  
t
LZ  
t
DQSQ  
t
+ 0.5  
+ 0.5  
1-4  
DQSQA  
t
t
t
t
t
CH  
or  
CH  
or  
CH  
or  
minimum half clk period for any given cycle;  
t
t
t
1-4  
1-4  
HP  
QH  
CK  
CK  
defined by clk high (t ) or clk low (t ) time  
CH  
CL  
t
CL  
CL  
CL  
t
-
t
-
t
HP  
-
HP  
HP  
Data output hold time from DQS  
t
0.75ns  
0.75  
0.35  
0.2  
0.75ns  
0.75  
0.35  
0.2  
1.0ns  
0.75  
0.35  
0.2  
t
Write command to 1st DQS latching transition  
DQS input low (high) pulse width (write cycle)  
DQS falling edge to CK setup time (write cycle)  
DQS falling edge hold time from CK (write cycle)  
Mode register set command cycle time  
Write preamble setup time  
1.25  
1.25  
1.25  
t
t
t
t
1-4  
1-4  
DQSS  
CK  
CK  
CK  
CK  
t
DQSL,H  
t
1-4  
DSS  
t
0.2  
0.2  
0.2  
1-4  
DSH  
t
14  
15  
16  
ns  
ns  
1-4  
MRD  
t
0
0
0
1-4, 7  
1-4, 6  
1-4  
WPRES  
t
Write postamble  
0.40  
0.25  
0.60  
0.40  
0.25  
0.60  
0.40  
0.25  
0.60  
t
WPST  
CK  
CK  
t
Write preamble  
t
WPRE  
Address and control input hold time  
(fast slew rate)  
t
0.9  
0.9  
1.0  
1.0  
0.9  
0.9  
1.0  
1.0  
1.1  
1.1  
1.1  
1.1  
ns  
ns  
ns  
2-4, 11,13,14  
2-4, 11,13,14  
2-4, 12-14  
IH  
Address and control input setup time  
(fast slew rate)  
t
IS  
Address and control input hold time  
(slow slew rate)  
t
t
IH  
IS  
Address and control input setup time  
(slow slew rate)  
ns  
ns  
2-4, 12-14  
t
Input pulse width  
Read preamble  
Read postamble  
2.2  
0.9  
2.2  
0.9  
2-4, 14  
1-4  
IPW  
t
1.1  
1.1  
0.9  
1.1  
t
RPRE  
CK  
CK  
t
0.40  
0.60  
0.40  
0.60  
0.40  
0.60  
t
1-4  
RPST  
58  
REV 1.0  
May, 2001  
©
NANYA TECHNOLOGY CORP. All rights reserved.  
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.  
 复制成功!