NT5DS32M4AT
NT5DS16M8AT
128Mb Double Data Rate SDRAM
Normal Strength Driver Pullup Characteristics
0
Minimum
Typical Low
Typical High
Maximum
-200
0
2.7
VOUT (V)
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will
drain to source voltages from 0.1 to 1.0.
not exceed 1.7, for device
6. The full variation in the ratio of the “typical” IBIS pullup to “typical” IBIS pulldown current should be unity + 10%, for device
drain to source voltages from 0.1 to 1.0. This specification is a design objective only. It is not guaranteed.
7. These characteristics are intended to obey the SSTL_2 class II standard.
8. This specification is intended for DDR SDRAM only.
53
REV 1.0
May, 2001
©
NANYA TECHNOLOGY CORP. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
ETC [ ETC ]
