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NT5DS16M8AT-7K 参数 Datasheet PDF下载

NT5DS16M8AT-7K图片预览
型号: NT5DS16M8AT-7K
PDF下载: 下载PDF文件 查看货源
内容描述: DDR同步DRAM [DDR Synchronous DRAM ]
分类和应用: 内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 76 页 / 1242 K
品牌: ETC [ ETC ]
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NT5DS32M4AT  
NT5DS16M8AT  
128Mb Double Data Rate SDRAM  
DC Electrical Characteristics and Operating Conditions  
(0°C £ TA £ 70°C; VDDQ = 2.5V ± 0.2V, VDD = + 2.5V ± 0.2V, see AC Characteristics)  
Symbol  
Parameter  
Min  
- 9.0  
9.0  
Max  
Units  
mA  
Notes  
1
I
I
Output Current: Weak Strength Driver  
OHW  
OLW  
High current (V  
Low current (V  
= V  
-0.763V, min V  
, min V  
)
TT  
OUT  
DDQ  
REF  
= 0.763V, max V  
, max V  
REF  
)
OUT  
TT  
1. Inputs are not recognized as valid until V  
stabilizes.  
REF  
2.  
V
is expected to be equal to 0.5 V  
of the transmitting device, and to track variations in the DC level of the same. Peak-to-peak  
DDQ  
REF  
noise on V  
may not exceed ± 2% of the DC value.  
REF  
3.  
4.  
V
is not applied directly to the device. V is a system supply for signal termination resistors, is expected to be set equal to V  
, and  
TT  
TT  
REF  
must track variations in the DC level of V  
.
REF  
V
is the magnitude of the difference between the input level on CK and the input level on CK  
ID  
5. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire tempera-ture and  
voltage range, for device drain to source voltages for 0.25 volts to 1.0 volts. For a given output, it represents the maximum difference  
between pullup and pulldown drivers due to process variation.  
Normal Strength Driver Pulldown and Pullup Characteristics  
1. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the  
outer bounding lines of the V-I curve.  
2. It is recommended that the typical” IBIS pulldown V-I curve lie within the shaded region of the V-I curve.  
Normal Strength Driver Pulldown Characteristics  
140  
Maximum  
Typical High  
Typical Low  
Minimum  
0
0
2.7  
VOUT (V)  
3. The full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the  
outer bounding lines of the V-I curve.  
4. It is recommended that the typical” IBIS pullup V-I curve lie within the shaded region of the V-I curve.  
52  
REV 1.0  
May, 2001  
©
NANYA TECHNOLOGY CORP. All rights reserved.  
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.  
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