NT5DS32M4AT
NT5DS16M8AT
128Mb Double Data Rate SDRAM
Write to Write (Burst Length = 4)
Maximum DQSS
T1
T2
T3
T4
T5
T6
CK
CK
Write
NOP
Write
NOP
NOP
NOP
Command
Address
BAa, COL b
BAa, COL n
t
(max)
DQSS
DQS
DQ
DI a-b
DI a-n
DM
Minimum DQSS
T1
T2
T3
T4
T5
T6
CK
CK
Write
NOP
Write
NOP
NOP
NOP
Command
Address
BA, COL b
BA, COL n
t
(min)
DQSS
DQS
DQ
DI a-b
DI a-n
DM
DI a-b = data in for bank a, column b, etc.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
3 subsequent elements of data in are applied in the programmed order following DI a-n.
A non-interrupted burst is shown.
Don’ t Care
Each Write command may be to any bank.
32
REV 1.0
May, 2001
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NANYA TECHNOLOGY CORP. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
ETC [ ETC ]
