Huajing Discrete Devices
1.15
Vgs(th),Threshold Voltage, Nomalized
1.05
1
0.95
0.9
0.85
0.8
0.75
0.7
0.65
-75
VGS=0V
ID=250μA
R
○
CS4N60FA9HD
1.1
Bvdss,Drain to Source
Breakdown Voltage, Normalized
1.1
1.05
1
0.95
VGS=0V
ID=250μA
0.9
-50
-25
0
25 50 75 100 125 150 175
Tj, Junction temperature , C
-55
-30
-5
20
45
70
95
120
Tj, Junction temperature , C
145
170
Figure 11 Typical Theshold Voltage vs Junction Temperature
10000
Figure 12 Typical Breakdown Voltage vs Junction Temperature
12
Vgs , Gate to Source Voltage ,Volts
VDS=180V
10
8
6
4
2
0
VDS=360V
VDS=480V
1000
Capacitance , pF
Ciss
100
Coss
10
V
GS
=0V , f=1MHz
Ciss=Cgs+Cgd
Coss=Cds+Cgd
Crss=Cgd
Crss
I
D
=2A
1
0.1
1
10
Vds , Drain - Source Voltage , Volts
100
0
2
4
6
8
10 12 14
Qg , Total Gate Charge , nC
16
18
20
Figure 13 Typical Capacitance vs Drain to Source Voltage
8
Isd, Reverse Drain Current , Amps
7
6
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1
Vsd , Source - Drain Voltage , Volts
1.2
+150℃
+25℃
-55℃
Figure 14 Typical Gate Charge vs Gate to Source Voltage
100
Id , Drain Current , Amps
STARTING Tj = 25℃
10
STARTING Tj = 150℃
1
If R=0: t
AV
=(L* I
AS
) / (1.38V
DSS
-V
DD
)
If R≠0: t
AV
=(L/R) In[IAS*R/ (1.38V
DSS
-V
DD
)+1]
R equals total Series resistance of Drain circuit
0.1
1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00
tav,Time in Avalanche,Seconds
Figure 15 Typical Body Diode Transfer Characteristics
Figure 16 Unclamped Inductive Switching Capability
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W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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ETC [ ETC ]
