Huajing Discrete Devices
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
R
○
CS4N60FA9HD
Idm , Peak Current , Amps
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
⎡
150
−
T
C
⎤
I
=
I
25
⎢
⎥
125
⎦
⎣
10
1
1.00E-05
1.00E-04
1.00E-03
1.00E-02
t
，
Pulse Width , Seconds
1.00E-01
1.00E+00
1.00E+01
9
Id , Drain Current , Amps
7.5
6
4.5
3
1.5
0
2
-55℃
+25℃
+150℃
PULSE DURATION = 10μs
DUTY CYCLE = 0.5%MAX
V
DS
=30V
Figure 6 Maximun Peak Current Capability
6
Rds(on), Drain to Source ON
Resistance , Ohms
5
4
3
2
1
0
3
4
5
Vgs , Gate to Source Voltage , Volts
6
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
℃
I
D
= 4A
I
D
= 2A
I
D
= 1A
Figure 7 Typical Transfer Characteristics
3
Rds(on), Drain to Source ON
Resistance, Ohms
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25
℃
6
8
10
12
14
Vgs , Gate to Source Voltage
，
Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
Rds(on), Drain to Source ON Resistance,
Nomalized
2.5
2.25
2
1.75
1.5
1.25
1
0.75
0.5
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=2A
4
2.5
2
V
GS
=20V
1.5
1
0
2
3
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
1
4
-50
0
50
100
Tj, Junction temperature , C
150
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
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W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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