Huajing Discrete Devices
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=4.0A,V
GS
=0V
I
S
=4.0A,T
j
= 25°C
dI
F
/dt=100A/us,
V
GS
=0V
R
○
CS4N60FA9HD
Test Conditions
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
µC
--
--
--
--
--
--
--
--
503
2.4
4
16
1.5
--
--
Pulse width tp≤380µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
4.17
100
Units
℃/W
℃/W
Gate-source Zener diode
Symbol
V
GSO
Parameter
Gate-source breakdown voltage
Test Conditions
I
GS
= ±1mA(Open Drain)
Rating
Min.
Typ.
Max.
Units
V
20
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
a1
a2
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=10mH,
I
D
=7.1A, Start T
J
=25℃
a3
：I
SD
=4A,di/dt
≤100A/us,V
DD
≤BV
DS,
Start T
J
=25℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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