Huajing Discrete Devices
Characteristics Curve：
100
R
○
CS4N60FA9HD
40
PD , Power Dissipation
，Watts
Id , Drain Current , Amps
10
1ms
30
1
OPERATION IN THIS AREA
MAY BE LIMITED BY R
DS(ON)
T
J
=MAX RATED
T
C
=25℃ Single Pulse
10ms
100ms
DC
20
0 .1
10
0 .0 1
1
0
10
100
V d s , D r a in - to - S o u r c e V o lta g e , V o lts
1000
0
25
50
75
100
TC , Case Temperature , C
125
150
Figure 1 Maximun Forward Bias Safe Operating Area
6
Id , Drain Current , Amps
5
Id , Drain Current , Amps
Figure 2 Maximun Power Dissipation vs Case Temperature
6
PULSE DURATION=10μs
DUTY FACTOR=0.5%MAX
Tc = 25℃
4.5
V
GS
=15V
4
3
2
1
0
0
25
75
100
125
50
TC , Case Tem perature , C
150
V
GS
=7V
3
V
GS
=6.5V
V
GS
=6V
1.5
V
GS
=4.5V
V
GS
=5.5V
0
0
5
10
15
20
Vds , Drain-to-Source Voltage , Volts
25
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
Thermal Impedance, Normalized
50%
20%
Figure 4 Typical Output Characteristics
0.1
10%
5%
2%
P
DM
0.01
Single pulse
t1
t2
1%
NOTES：
DUTY FACTOR
：D=t1/
t2
PEAK Tj=P
DM
*Z
thJC
*R
thJC
+T
C
0.001
0.00001
0.0001
0.001
0.01
Rectangular Pulse Duration,Seconds
0.1
1
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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