Huajing Discrete Devices
R
○
CS4N60FA9HD
Electrical Characteristics
（Tc=
25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
Test Conditions
V
GS
=0V, I
D
=250µA
ID=250uA,Reference25℃
V
DS
=600V, V
GS
= 0V,
T
a
= 25℃
V
DS
=480V, V
GS
= 0V,
T
a
= 25℃
V
GS
=+30V
V
GS
=-30V
Rating
Min.
Typ.
Max.
Unit
s
V
V/℃
µA
µA
µA
µA
600
--
--
--
--
--
--
0.67
--
--
--
--
--
--
25
250
10
-10
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=2A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
Typ.
Max.
Units
Ω
V
--
2.0
2.0
2.3
4.0
Pulse width tp≤380µs,δ≤2%
Dynamic Characteristics
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
V
DS
=15V, I
D
=2A
Rating
Min.
Typ.
Max.
Units
S
pF
5.0
--
--
--
570
55
4.2
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=4A V
DD
=300V
V
GS
= 10V
I
D
=4A V
DD
= 300V
R
G
=25Ω
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
9.5
4.9
28.5
9
13
3
5
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 2 o f 1 0
2 0 11
ETC [ ETC ]
