Le77D11
Data Sheet
SPECIFICATIONS
System Specifications
The performance targets defined in this section are for a system using the Le78D11/Le77D11 chip set. Specifications for the
Le78D11 VoSLAC device are published separately.
Item
Condition
Min
Typ
Max
Unit
Note
Output Impedance during
internal ringing
Ringing mode, Le78D11 VoSLAC
device generating internal ringing
Ω
4.
2 • RF
Ringing mode,
RL = 1500 Ω generating internal
Sinusoidal Ringing THD
2
%
4.
sinusoidal ringing
Signaling Performance Limits
Hook switch threshold
Hook switch hysteresis
ITH = 10 mA
All ITH settings
RTSL = 2.2 W (07h)
7
13
mA
%
%
4.
3.
4.
10
Internal Ring-trip Accuracy
–20
+20
Device Specifications
Specification
Condition
Min
Typ
Max
Unit
Note
Line Characteristics
VA, Active
VB, Reverse Polarity
RL = open
–4
–1
VA
Standby, RL = open
Active or Reverse Polarity,
RL = open
VAB
45
45
48
51
1.
1.
V
VAB open
VREG
Standby, RL = open
48
54.5
–66
Active or Reverse Polarity,
RL = open
–50
–58
VREG
Standby, RL = open
–49.5
13
8
–54
15
10
–62
17
12
Active or Reverse Polarity
Standby
Current limit threshold
4.
I
LTH accuracy
Active or Reverse Polarity,
I
I
LTH + 7
ILTH + 11.3
ILTH + 11.5
ILTH + 17
ILTH + 16
ILTH + 20
ILTH + 20
ILTH + 29
ILTH + 25
RL = 600 Ω; ILTH = 15 mA
Loop Current, IL accuracy
Short circuit loop current, ISC
LPFi
Standby
RL = 600 Ω; ILTH = 10 mA
LTH + 7
mA
Active or Reverse Polarity,
RL = 100 Ω; ILTH = 15 mA
I
LTH + 7.8
LTH + 10
Standby
RL = 100 Ω; ILTH = 10 mA
I
Output impedance
Bias voltage with respect to GND
Leakage current for capacitor
value of 4.7 µF ± 20%
|INPR|
25
2.4
kΩ
V
3.
3.
0.1
µA
µA
NPRFILTi drive capability
20
50
–4
100
Ringing and Line Test State
VIN = 0 V, with respect to VREF
RL = 1400 Ω
,
VA, VB
V
V
VIN = 0 V, with respect to VREF
RL = 1400 Ω
,
VAB offset
–2
95
+2
VAB
RL open, KR = ---------
VIN
RL = 1400 Ω, VIN = 0.9 Vpk
RL = 1400 Ω, VIN = 0.9 Vpk
Voltage gain, KR
Ringing distortion
100
0.5
105
3.5
V/V
%
1.
14
Zarlink Semiconductor Inc.
ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
