Philips Semiconductors
Preliminary specification
320 macrocell SRAM CPLD
PZ3320C/PZ3320N
DC ELECTRICAL CHARACTERISTICS FOR COMMERCIAL GRADE DEVICES
Commercial temperature range: V = 3.0V to 3.6V; 0°C < T
< 70°C
DD
amb
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
2.0
–0.3
2.4
–
MAX
V +0.3
DD
UNIT
V
V
V
V
V
Input high voltage
V
V
V
V
V
= 3.6V
= 3.0V
IH
DD
DD
DD
DD
DD
Input low voltage
0.8
V
IL
Output high voltage
Output low voltage
Input leakage current
= 3.0V; I = –8mA
–
V
OH
OL
OH
= 3.0V; I = 8mA
0.4
10
V
OH
I
I
= 3.6V; 0 < V < V
DD
–10
µA
I
IN
T
amb
= 25°C; no output loads,
Standby current
–
100
µA
DDSB
inputs at V or V
.
DD
SS
C
C
C
R
R
Input capacitance
T
= 25°C; V = 3.3V; f = 1MHz
–
–
10
10
pF
pF
pF
kΩ
kΩ
IN
amb
DD
I/O capacitance
T
= 25°C; V = 3.3V; f = 1MHz
IO
amb DD
Clock pin capacitance
done pull-up resistor
Unused I/O pull-down resistor
T
amb
= 25°C; V = 3.3V; f = 1MHz
–
12
CLK
DONE
PD
DD
V
V
= 3.0 V; V = 0 V
10
100
30
DD
IN
= 3.6V; V = V
400
DD
IN
DD
26
1998 Jul 22