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DS617 参数 Datasheet PDF下载

DS617图片预览
型号: DS617
PDF下载: 下载PDF文件 查看货源
内容描述: 平台的Flash XL高密度配置和存储设备 [Platform Flash XL High-Density Configuration and Storage Device]
分类和应用: 存储
文件页数/大小: 88 页 / 2352 K
品牌: XILINX [ XILINX, INC ]
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R
Platform Flash XL High-Density Configuration and Storage Device  
Buffer is full (32 words). To program less than 32 words, the  
remaining words should be programmed with FFFFh.  
Buffer Enhanced Factory Program Command  
The Buffer Enhanced Factory Program command has been  
specially developed to speed up programming in  
manufacturing environments where the programming time  
is critical. The command is used to program one or more  
Write Buffer(s) of 32 words to a block. After the device  
enters Buffer Enhanced Factory Program mode, the Write  
Buffer can be reloaded any number of times as long as the  
address remains within the same block. Only one block can  
be programmed at a time.  
Four successive steps are required to issue and execute the  
Program and Verify Phase of the command.  
1. One Bus Write operation is used to latch the Start  
Address and the first word to be programmed. The  
Status Register Bank Write Status bit SR0 should be  
read to check that the P/E.C. is ready for the next word.  
2. Each subsequent word to be programmed is latched  
with a new Bus Write operation. The address must  
remain the Start Address as the P/E.C. increments the  
address location.If any address not in the same block  
as the Start Address is given, the Program and Verify  
Phase terminates. Status Register bit SR0 should be  
read between each Bus Write cycle to check that the  
P/E.C. is ready for the next word.  
If the block being programmed is protected, then the  
Program operation aborts, data in the block is not changed,  
and the Status Register outputs the error.  
The use of the Buffer Enhanced Factory Program command  
requires certain operating conditions:  
V
V
must be set to V  
.
PPH  
PP  
DD  
3. After the Write Buffer is full, the data is programmed  
sequentially to the memory array. After the program  
operation, the device automatically verifies the data and  
reprograms if necessary.  
must be within operating range.  
Ambient temperature T must be 30°C 10°C.  
A
The targeted block must be unlocked.  
The Program and Verify phase can be repeated without  
re-issuing the command to program an additional 32-  
word locations as long as the address remains in the  
same block.  
The start address must be aligned with the start of a  
32- word buffer boundary.  
The address must remain the Start Address  
throughout programming.  
4. Finally, after all words, or the entire block are  
programmed, one Bus Write operation must be written  
to any address outside the block containing the Start  
Address to terminate Program and Verify Phase.  
Dual operations are not supported during the Buffer  
Enhanced Factory Program operation, and the command  
cannot be suspended.  
The Buffer Enhanced Factory Program Command consists  
of three phases: Setup, Program and Verify, and Exit (refer  
to Table 8, page 21 for detail information).  
Status Register bit SR0 must be checked to determine  
whether the program operation is finished. The Status  
Register can be checked for errors at any time but must be  
checked after the entire block is programmed.  
Setup Phase  
Exit Phase  
The Buffer Enhanced Factory Program command requires  
two Bus Write cycles to initiate the command:  
Status Register P/E.C. bit SR7 is set to ‘1’ when the device  
exits the Buffer Enhanced Factory Program operation and  
returns to Read Status Register mode. A full Status  
Register check should be done to ensure that the block is  
successfully programmed. See "Status Register," page 23  
for more details.  
The first Bus Write cycle sets up the Buffer Enhanced  
Factory Program command.  
The second Bus Write cycle confirms the command.  
After the confirm command is issued, read operations  
output the contents of the Status Register.  
For optimum performance, the Buffer Enhanced Factory  
Program command should be limited to a maximum of 100  
program/erase cycles per block. If this limit is exceeded, the  
internal algorithm continues to work properly, but some  
degradation in performance is possible. Typical program  
times are given in Table 21, page 44.  
Caution! The read Status Register command must not be  
issued as it is interpreted as data to program.  
The Status Register Program/Erase Controller (P/E.C). Bit  
SR7 should be read to check that the P/E.C. is ready to  
proceed to the next phase.  
See Figure 45, page 79, for a suggested flowchart on using  
the Buffer Enhanced Factory Program command.  
If an error is detected, SR4 goes High (set to ‘1’) and the  
Buffer Enhanced Factory Program operation is terminated.  
See "Status Register," page 23 for details on the error.  
Program/Erase Suspend Command  
Program and Verify Phase  
The Program/Erase Suspend command is used to pause a  
Program or Block Erase operation. The command can be  
addressed to any bank.  
The Program and Verify Phase requires 32 cycles to program  
the 32 words to the Write Buffer. Data is stored sequentially,  
starting at the first address of the Write Buffer until the Write  
DS617 (v3.0.1) January 07, 2010  
www.xilinx.com  
Product Specification  
15  
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