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DS617 参数 Datasheet PDF下载

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型号: DS617
PDF下载: 下载PDF文件 查看货源
内容描述: 平台的Flash XL高密度配置和存储设备 [Platform Flash XL High-Density Configuration and Storage Device]
分类和应用: 存储
文件页数/大小: 88 页 / 2352 K
品牌: XILINX [ XILINX, INC ]
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Platform Flash XL High-Density Configuration and Storage Device  
Command Interface  
All Bus Write operations to the memory are interpreted by  
the Command Interface. Commands consist of one or more  
sequential Bus Write operations. An internal Program/Erase  
Controller handles all timings and verifies the correct  
execution of the program and erase commands. The  
Program/Erase Controller provides a Status Register whose  
output can be read at any time to monitor the progress or the  
result of the operation.  
A Read Array command can be issued to any bank while  
programming or erasing in another bank. If the Read Array  
command is issued to a bank currently executing a program  
or erase operation, the bank returns to Read Array mode  
but the program or erase operation continues; however the  
data output from the bank is not guaranteed until the  
program or erase operation finishes. The read modes of  
other banks are not affected.  
The Command Interface is set to synchronous read mode  
when power is first applied, when exiting from Reset, or  
Read Status Register Command  
whenever V falls below its power-down threshold.  
Command sequences must be followed exactly — any invalid  
combination of commands are ignored.  
DD  
The device contains a Status Register used to monitor  
program or erase operations.  
The Read Status Register command is used to read the  
contents of the Status Register for the addressed bank. One  
Bus Write cycle is required to issue the Read Status  
Register command. After a bank is in Read Status Register  
mode, subsequent read operations output the contents of  
the Status Register.  
Table 6 provides a summary of the Command Interface codes.  
Table 6: Command Codes  
Hex Code  
01h  
Command  
Block Lock Confirm  
03h  
Set Configuration Register Confirm  
Alternative Program Setup  
Block Erase Setup  
The Status Register data is latched on the falling edge of  
Chip Enable or Output Enable. Either Chip Enable or Output  
Enable must be toggled to update the Status Register data.  
10h  
20h  
The Read Status Register command can be issued at any  
time, even during program or erase operations. The Read  
Status Register command only changes the read mode of  
the addressed bank. The read modes of other banks are not  
affected. Only Asynchronous Read and Single  
Synchronous Read operations should be used to read the  
Status Register.  
2Fh  
Block Lock-Down Confirm  
Program Setup  
40h  
50h  
Clear Status Register  
Block Lock Setup, Block Unlock Setup, Block Lock  
Down Setup and Set Configuration Register Setup  
60h  
70h  
80h  
90h  
98h  
B0h  
BCh  
C0h  
CBh  
Read Status Register  
A Read Array command is required to return the bank to  
Read Array mode.  
Buffer Enhanced Factory Program Setup  
Read Electronic Signature  
Read CFI Query  
See Table 11, page 23 for the description of the Status  
Register Bits.  
Program/Erase Suspend  
Blank Check Setup  
Read Electronic Signature Command  
Protection Register Program  
Blank Check Confirm  
The Read Electronic Signature command is used to read the  
Manufacturer and Device Codes, Lock Status of the  
addressed bank, Protection Register, and Configuration  
Register. One Bus Write cycle is required to issue the Read  
Electronic Signature command. After a bank is in Read  
Electronic Signature mode, subsequent read operations in  
the same bank output the Manufacturer Code, Device Code,  
Lock Status of the addressed bank, Protection Register, or  
Configuration Register (see Table 10, page 22).  
Program/Erase Resume, Block Erase Confirm,  
Block Unlock Confirm, Buffer Program or Buffer  
Enhanced Factory Program Confirm  
D0h  
E8h  
FFh  
Buffer Program  
Read Array  
Read Array Command  
The Read Electronic Signature command can be issued at any  
time, even during program or erase operations, except during  
Protection Register Program operations. Dual operations  
between the Parameter bank and the Electronic Signature  
location are not allowed (see Table 17, page 36 for details).  
The Read Array command returns the addressed bank to  
Read Array mode. One Bus Write cycle is required to issue  
the Read Array command. After a bank is in Read Array  
mode, subsequent read operations output data from the  
memory array.  
If a Read Electronic Signature command is issued to a bank  
executing a program or erase operation, the bank enters  
DS617 (v3.0.1) January 07, 2010  
www.xilinx.com  
Product Specification  
12