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W9825G6KH-6 参数 Datasheet PDF下载

W9825G6KH-6图片预览
型号: W9825G6KH-6
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, TSOP2-54]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 42 页 / 714 K
品牌: WINBOND [ WINBOND ]
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W9825G6KH  
Notes:  
1. Operation exceeds “Absolute Maximum Ratings” may cause permanent damage to the devices.  
2. All voltages are referenced to VSS.  
3. These parameters depend on the cycle rate and listed values are measured at a cycle rate with the  
minimum values of tCK and tRC.  
4. These parameters depend on the output loading conditions. Specified values are obtained with  
output open.  
5. Power up sequence please refer to Functional Descriptionsection described before.  
6. AC test load diagram.  
1.4 V  
50 ohms  
output  
Z = 50 ohms  
30pF  
ACTEST LOAD  
7. tHZ defines the time at which the outputs achieve the open circuit condition and is not referenced to  
output level.  
8. Assumed input rise and fall time (tT) = 1nS.  
If tr & tf is longer than 1nS, transient time compensation should be considered,  
i.e., [(tr + tf)/2-1]nS should be added to the parameter.  
9. If clock rising time (tT) is longer than 1nS, (tT/2-0.5)nS should be added to the parameter.  
Publication Release Date: Sep. 01, 2014  
Revision: A02  
- 16 -  
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