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W9412G6JH-5 参数 Datasheet PDF下载

W9412G6JH-5图片预览
型号: W9412G6JH-5
PDF下载: 下载PDF文件 查看货源
内容描述: 双倍数据速率的架构;每个时钟周期2的数据传输 [Double Data Rate architecture; two data transfers per clock cycle]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率数据传输时钟
文件页数/大小: 53 页 / 1006 K
品牌: WINBOND [ WINBOND ]
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W9412G6JH  
1. GENERAL DESCRIPTION  
W9412G6JH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR  
SDRAM); organized as 2M words 4 banks 16 bits. W9412G6JH delivers a data bandwidth of up to  
500M words per second (-4). To fully comply with the personal computer industrial standard,  
W9412G6JH is sorted into the following speed grades: -4, -5, -5I, -5K and -6I. The -4 is compliant to  
the DDR500/CL3 and CL4 specification. The -5/-5I/-5K grade parts are compliant to the DDR400/CL3  
specification (the -5I industrial grade parts is guaranteed to support -40°C ≤ TA ≤ 85°C, the -5K  
automotive grade parts is guaranteed to support -40°C ≤ TA 105°C). The -6I grade parts is compliant  
to the DDR333/CL2.5 specification which is guaranteed to support -40°C ≤ TA ≤ 85°C.  
All Input reference to the positive edge of CLK (except for DQ, DM and CKE). The timing reference  
point for the differential clock is when the CLK and CLK signals cross during a transition. Write and  
Read data are synchronized with the both edges of DQS (Data Strobe).  
By having a programmable Mode Register, the system can change burst length, latency cycle,  
interleave or sequential burst to maximize its performance. W9412G6JH is ideal for main memory in  
high performance applications.  
2. FEATURES  
2.5V 0.2V Power Supply for DDR400/333  
2.4V~2.7V Power Supply for DDR500  
Up to 250 MHz Clock Frequency  
Double Data Rate architecture; two data transfers per clock cycle  
Differential clock inputs (CLK and CLK )  
DQS is edge-aligned with data for Read; center-aligned with data for Write  
CAS Latency: 2, 2.5, 3 and 4  
Burst Length: 2, 4 and 8  
Auto Refresh and Self Refresh  
Precharged Power Down and Active Power Down  
Write Data Mask  
Write Latency = 1  
15.6µS Refresh interval (4K/64 mS Refresh), @ 0°C TA 85°C  
3.9µS Refresh interval (4K/16 mS Refresh), @ 85°C < TA 105°C  
Maximum burst refresh cycle: 8  
Interface: SSTL_2  
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant  
Note: Not support self refresh function with TA > 85°C  
Publication Release Date: Nov. 29, 2011  
Revision A03  
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