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W25Q128BV 参数 Datasheet PDF下载

W25Q128BV图片预览
型号: W25Q128BV
PDF下载: 下载PDF文件 查看货源
内容描述: 具有双路和四路SPI 3V 128M位串行闪存 [3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI]
分类和应用: 闪存
文件页数/大小: 74 页 / 756 K
品牌: WINBOND [ WINBOND ]
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W25Q128BV  
7.2.26 Chip Erase (C7h / 60h)  
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A Write  
Enable instruction must be executed before the device will accept the Chip Erase Instruction (Status  
Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the  
instruction code “C7h” or “60h”. The Chip Erase instruction sequence is shown in Figure 24.  
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip Erase  
instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction will  
commence for a time duration of tCE (See AC Characteristics). While the Chip Erase cycle is in progress,  
the Read Status Register instruction may still be accessed to check the status of the BUSY bit. The BUSY  
bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is ready to accept  
other instructions again. After the Chip Erase cycle has finished the Write Enable Latch (WEL) bit in the  
Status Register is cleared to 0. The Chip Erase instruction will not be executed if any page is protected by  
the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits (see Status Register Memory Protection  
table).  
/CS  
Mode 3  
Mode 0  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
CLK  
Instruction (C7h/60h)  
High Impedance  
DI  
(IO0)  
DO  
(IO1)  
Figure 24. Chip Erase Instruction Sequence Diagram  
Publication Release Date: April 01, 2011  
Revision E  
- 45 -  
 
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