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W25Q128BV 参数 Datasheet PDF下载

W25Q128BV图片预览
型号: W25Q128BV
PDF下载: 下载PDF文件 查看货源
内容描述: 具有双路和四路SPI 3V 128M位串行闪存 [3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI]
分类和应用: 闪存
文件页数/大小: 74 页 / 756 K
品牌: WINBOND [ WINBOND ]
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W25Q128BV  
7.2.29 Power-down (B9h)  
Although the standby current during normal operation is relatively low, standby current can be further  
reduced with the Power-down instruction. The lower power consumption makes the Power-down  
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC Characteristics).  
The instruction is initiated by driving the /CS pin low and shifting the instruction code “B9h” as shown in  
Figure 27.  
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-down  
instruction will not be executed. After /CS is driven high, the power-down state will entered within the time  
duration of tDP (See AC Characteristics). While in the power-down state only the Release from Power-  
down / Device ID instruction, which restores the device to normal operation, will be recognized. All other  
instructions are ignored. This includes the Read Status Register instruction, which is always available  
during normal operation. Ignoring all but one instruction makes the Power Down state a useful condition  
for securing maximum write protection. The device always powers-up in the normal operation with the  
standby current of ICC1.  
/CS  
tDP  
Mode 3  
Mode 0  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
CLK  
Instruction (B9h)  
DI  
(IO0)  
Stand-by current  
Power-down current  
Figure 27. Deep Power-down Instruction Sequence Diagram  
- 48 -  
 
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