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W25Q128BV 参数 Datasheet PDF下载

W25Q128BV图片预览
型号: W25Q128BV
PDF下载: 下载PDF文件 查看货源
内容描述: 具有双路和四路SPI 3V 128M位串行闪存 [3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI]
分类和应用: 闪存
文件页数/大小: 74 页 / 756 K
品牌: WINBOND [ WINBOND ]
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W25Q128BV  
7.2.28 Erase / Program Resume (7Ah)  
The Erase/Program Resume instruction “7Ah” must be written to resume the Sector or Block Erase  
operation or the Page Program operation after an Erase/Program Suspend. The Resume instruction “7Ah”  
will be accepted by the device only if the SUS bit in the Status Register equals to 1 and the BUSY bit  
equals to 0. After issued the SUS bit will be cleared from 1 to 0 immediately, the BUSY bit will be set from  
0 to 1 within 200ns and the Sector or Block will complete the erase operation or the page will complete the  
program operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume instruction “7Ah”  
will be ignored by the device. The Erase/Program Resume instruction sequence is shown in Figure 26.  
Resume instruction is ignored if the previous Erase/Program Suspend operation was interrupted by  
unexpected power off. It is also required that a subsequent Erase/Program Suspend instruction not to be  
issued within a minimum of time of “tSUS” following a previous Resume instruction.  
/CS  
Mode 3  
Mode 0  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
CLK  
Instruction (7Ah)  
DI  
(IO0)  
Resume previously  
suspended Program or  
Erase  
Figure 26. Erase/Program Resume Instruction Sequence  
Publication Release Date: April 01, 2011  
Revision E  
- 47 -  
 
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