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25M02GVTCIG 参数 Datasheet PDF下载

25M02GVTCIG图片预览
型号: 25M02GVTCIG
PDF下载: 下载PDF文件 查看货源
内容描述: [3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ CONCURRENT OPERATIONS]
分类和应用:
文件页数/大小: 68 页 / 820 K
品牌: WINBOND [ WINBOND ]
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W25M02GV  
9.4 DC Electrical Characteristics  
SPEC  
TYP  
PARAMETER  
SYMBOL CONDITIONS  
UNIT  
MAX  
MIN  
(1)  
(1)  
Input Capacitance  
Output Capacitance  
Input Leakage  
CIN  
VIN = 0V  
6
8
pF  
pF  
µA  
µA  
(1)  
(1)  
Cout  
ILI  
VOUT = 0V  
±4  
±4  
I/O Leakage  
ILO  
/CS = VCC,  
VIN = GND or VCC  
Standby Current  
Read Current  
ICC1  
ICC2  
20  
25  
100  
35  
µA  
C = 0.1 VCC / 0.9 VCC  
DO = Open  
mA  
Current Page Program  
Current Block Erase  
ICC3  
ICC4  
/CS = VCC  
/CS = VCC  
25  
25  
35  
35  
mA  
mA  
Current  
Concurrent Operations  
ICC5  
/CS = VCC  
70  
mA  
Input Low Voltage  
Input High Voltage  
Output Low Voltage  
Output High Voltage  
Notes:  
VIL  
VCC x 0.3  
V
V
V
V
VIH  
VOL  
VOH  
VCC x 0.7  
2.4  
IOL = 2.1mA  
0.4  
IOH = –400 µA  
1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3.0V.  
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