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25M02GVTCIG 参数 Datasheet PDF下载

25M02GVTCIG图片预览
型号: 25M02GVTCIG
PDF下载: 下载PDF文件 查看货源
内容描述: [3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ CONCURRENT OPERATIONS]
分类和应用:
文件页数/大小: 68 页 / 820 K
品牌: WINBOND [ WINBOND ]
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W25M02GV  
AC Electrical Characteristics (cont’d)  
DESCRIPTION  
SPEC  
SYMBOL  
ALT  
UNIT  
MIN  
TYP  
MAX  
/HOLD Not Active Setup Time relative to CLK  
/HOLD Not Active Hold Time relative to CLK  
/HOLD to Output Low-Z  
tHHCH  
tCHHL  
5
5
ns  
ns  
ns  
ns  
ns  
ns  
ns  
(2)  
tHHQX  
tLZ  
7
(2)  
/HOLD to Output High-Z  
tHLQZ  
tHZ  
12  
Write Protect Setup Time Before /CS Low  
Write Protect Hold Time After /CS High  
Status Register Write Time  
tWHSL  
tSHWL  
tW  
20  
100  
50  
/CS High to next Instruction after Reset during  
Page Data Read / Program Execute / Block Erase  
(2)  
tRST  
5/10/500  
µs  
Read Page Data Time (ECC disabled)  
Read Page Data Time (ECC enabled)  
Page Program, OTP Lock, BBM Management Time  
Block Erase Time  
tRD1  
tRD2  
tPP  
25  
60  
µs  
µs  
us  
250  
2
700  
10  
tBE  
ms  
Number of partial page programs  
NoP  
4
times  
Notes:  
1. Clock high + Clock low must be less than or equal to 1/fC.  
2. Value guaranteed by design and/or characterization, not 100% tested in production.  
3. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3.0V.  
Publication Release Date: July 1, 2015  
Preliminary - Revision B  
- 60 -  
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