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25M02GVTCIG 参数 Datasheet PDF下载

25M02GVTCIG图片预览
型号: 25M02GVTCIG
PDF下载: 下载PDF文件 查看货源
内容描述: [3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ CONCURRENT OPERATIONS]
分类和应用:
文件页数/大小: 68 页 / 820 K
品牌: WINBOND [ WINBOND ]
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W25M02GV  
9. ELECTRICAL CHARACTERISTICS(1)  
(2)  
9.1 Absolute Maximum Ratings  
PARAMETERS  
Supply Voltage  
SYMBOL  
VCC  
CONDITIONS  
RANGE  
UNIT  
V
–0.6 to +4.6  
–0.6 to +4.6  
Voltage Applied to Any Pin  
Transient Voltage on any Pin  
VIO  
Relative to Ground  
V
<20nS Transient  
Relative to Ground  
VIOT  
–2.0V to VCC+2.0V  
V
Short Circuit Output Crrent, IOs  
Storage Temperature  
5
mA  
°C  
°C  
V
TSTG  
TLEAD  
VESD  
–65 to +150  
See Note (3)  
–2000 to +2000  
Lead Temperature  
Electrostatic Discharge Voltage  
Human Body Model(4)  
Notes:  
1. Specification for W25M02GV is preliminary. See preliminary designation at the end of this document.  
2. This device has been designed and tested for the specified operation ranges. Proper operation outside  
of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability.  
Exposure beyond absolute maximum ratings may cause permanent damage.  
3. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the  
European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.  
4. JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).  
9.2 Operating Ranges  
SPEC  
PARAMETER  
SYMBOL  
CONDITIONS  
UNIT  
MIN  
MAX  
Supply Voltage  
VCC  
TA  
2.7  
3.6  
V
Ambient Temperature,  
Operating  
Industrial  
–40  
+85  
°C  
- 55 -  
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