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25M02GVTCIG 参数 Datasheet PDF下载

25M02GVTCIG图片预览
型号: 25M02GVTCIG
PDF下载: 下载PDF文件 查看货源
内容描述: [3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ CONCURRENT OPERATIONS]
分类和应用:
文件页数/大小: 68 页 / 820 K
品牌: WINBOND [ WINBOND ]
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W25M02GV  
9.3 Power-up Power-down Timing Requirements  
SPEC  
PARAMETER  
SYMBOL  
UNIT  
MIN  
500  
5
MAX  
VCC (min) to /CS Low  
tVSL(1)  
tPUW(1)  
VWI(1)  
µs  
ms  
V
Time Delay Before Write Instruction  
Write Inhibit Threshold Voltage  
1.0  
2.0  
Note:  
1. These parameters are characterized only.  
VCC  
VCC(max)  
0Fh/05h/9Fh/FFh are  
the only commands allowed.  
/CS must track VCC  
Device is fully accessible  
(Page 0 with ECC is ready in Buffer)  
VCC(min)  
tVSL  
Reset State  
VWI  
tPUW  
Time  
Figure 30a. Power-up Timing and Voltage Levels  
/CS must track VCC  
during VCC Ramp Up/Down  
VCC  
/CS  
Time  
Figure 30b. Power-up, Power-Down Requirement  
Publication Release Date: July 1, 2015  
Preliminary - Revision B  
- 56 -  
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