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WCSN0436V1P-133AC 参数 Datasheet PDF下载

WCSN0436V1P-133AC图片预览
型号: WCSN0436V1P-133AC
PDF下载: 下载PDF文件 查看货源
内容描述: 128Kx36流水线SRAM与NOBL TM架构 [128Kx36 Pipelined SRAM with NoBL TM Architecture]
分类和应用: 静态存储器
文件页数/大小: 14 页 / 285 K
品牌: WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
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WCSN0436V1P  
Switching Characteristics Over the Operating Range[13, 14, 15]  
-166  
-150  
-143  
-133  
-100  
-80  
Parameter  
tCYC  
Description  
Clock Cycle Time  
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit  
5.0  
1.4  
1.4  
1.5  
6.6  
2.5  
2.5  
1.5  
7.0  
2.8  
2.8  
2.0  
7.5  
3.0  
3.0  
2.0  
10  
4.0  
4.0  
2.2  
12.5  
4.0  
4.0  
2.5  
ns  
ns  
ns  
ns  
tCH  
Clock HIGH  
Clock LOW  
tCL  
tAS  
Address Set-Up Before CLK  
Rise  
tAH  
tCO  
Address Hold After CLK Rise  
0.5  
0.5  
0.5  
0.5  
0.5  
1.0  
ns  
ns  
Data Output Valid After CLK  
Rise  
3.5  
3.8  
4.0  
4.2  
5.0  
7.0  
tDOH  
Data Output Hold After CLK  
Rise  
1.5  
1.5  
1.5  
1.5  
1.5  
ns  
tCENS  
tCENH  
tWES  
CEN Set-Up Before CLK Rise 1.5  
1.5  
0.5  
1.5  
2.0  
0.5  
2.0  
2.0  
0.5  
2.0  
2.2  
0.5  
2.2  
2.5  
1.0  
2.5  
ns  
ns  
ns  
CEN Hold After CLK Rise  
0.5  
1.5  
GW, BWS[3:0] Set-Up Before  
CLK Rise  
tWEH  
tALS  
GW, BWS[3:0] Hold After CLK 0.5  
Rise  
0.5  
1.5  
0.5  
2.0  
0.5  
2.0  
0.5  
2.2  
1.0  
2.5  
ns  
ns  
ADV/LD Set-Up Before CLK  
Rise  
1.5  
tALH  
tDS  
ADV/LD Hold after CLK Rise  
0.5  
0.5  
1.5  
0.5  
1.7  
0.5  
1.7  
0.5  
2.0  
1.0  
2.5  
ns  
ns  
Data Input Set-Up Before CLK 1.5  
Rise  
tDH  
Data Input Hold After CLK Rise 0.5  
0.5  
1.5  
0.5  
2.0  
0.5  
2.0  
0.5  
2.2  
1.0  
2.5  
ns  
ns  
tCES  
Chip Enable Set-Up Before  
CLK Rise  
1.5  
tCEH  
Chip Enable Hold After CLK  
Rise  
0.5  
0.5  
0.5  
0.5  
0.5  
1.0  
ns  
tCHZ  
tCLZ  
Clock to High-Z[12, 14, 15, 16]  
Clock to Low-Z[12, 14, 15, 16]  
1.5 3.2 1.5 3.2 1.5 3.5 1.5 3.5 1.5 3.5 1.5 5.0  
ns  
ns  
ns  
1.5  
1.5  
0
1.5  
0
1.5  
0
1.5  
0
1.5  
0
tEOHZ  
OE HIGH to Output High-Z[12,  
3.0  
3.0  
4.0  
4.2  
5.0  
7.0  
14, 15, 16]  
tEOLZ  
OE LOW to Output Low-Z[12,  
0.0  
ns  
ns  
14, 15, 16]  
tEOV  
OE LOW to Output Valid[14]  
3.2  
3.5  
4.0  
4.2  
5.0  
7.0  
Notes:  
14.  
tCHZ, tCLZ, tOEV, tEOLZ, and tEOHZ are specified with A/C test conditions shown in part (a) of AC Test Loads. Transition is measured ± 200 mV from steady-state  
voltage.  
15. At any given voltage and temperature, tEOHZ is less than tEOLZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same  
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed  
to achieve High-Z prior to Low-Z under the same system conditions.  
16. This parameter is sampled and not 100% tested.  
Document #: 38-05246 Rev. **  
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