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WCSN0436V1P-133AC 参数 Datasheet PDF下载

WCSN0436V1P-133AC图片预览
型号: WCSN0436V1P-133AC
PDF下载: 下载PDF文件 查看货源
内容描述: 128Kx36流水线SRAM与NOBL TM架构 [128Kx36 Pipelined SRAM with NoBL TM Architecture]
分类和应用: 静态存储器
文件页数/大小: 14 页 / 285 K
品牌: WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
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WCSN0436V1P  
and DP[3:0] are automatically three-stated during the data por-  
tion of a write cycle, regardless of the state of OE.  
Linear Burst Sequence  
Burst Write Accesses  
First  
Address  
Second  
Address  
Third  
Address  
Fourth  
Address  
The WCSN0436V1p has an on-chip burst counter that allows  
the user the ability to supply a single address and conduct up  
to four WRITE operations without reasserting the address in-  
puts. ADV/LD must be driven LOW in order to load the initial  
address, as described in the Single Write Access section  
above. When ADV/LD is driven HIGH on the subsequent clock  
rise, the chip enables (CE1, CE2, and CE3) and WE inputs are  
ignored and the burst counter is incremented. The correct  
BWS[3:0] inputs must be driven in each cycle of the burst write  
in order to write the correct bytes of data.  
Ax+1, Ax  
Ax+1, Ax  
Ax+1, Ax  
Ax+1, Ax  
00  
01  
10  
11  
01  
10  
11  
00  
10  
11  
00  
01  
11  
00  
01  
10  
Interleaved Burst Sequence  
First  
Address  
Second  
Address  
Third  
Address  
Fourth  
Address  
Ax+1, Ax  
Ax+1, Ax  
Ax+1, Ax  
Ax+1, Ax  
00  
01  
10  
11  
01  
00  
11  
10  
10  
11  
00  
01  
11  
10  
01  
00  
[
]
Cycle Description Truth Table 1, 2, 3, 4, 5, 6  
Address  
Used  
ADV/  
LD/  
Operation  
CE  
CEN  
WE  
BWSx  
CLK  
Comments  
Deselected  
External  
1
0
L
X
X
L-H  
I/Os three-state following next rec-  
ognized clock.  
Suspend  
-
X
1
X
X
X
L-H  
Clock ignored, all operations sus-  
pended.  
Begin Read  
Begin Write  
External  
External  
0
0
0
0
0
0
1
0
X
L-H  
L-H  
Address latched.  
Valid  
Address latched, data presented  
two valid clocks later.  
Burst Read  
Operation  
Internal  
X
0
1
X
X
L-H  
Burst Read operation. Previous ac-  
cess was a Read operation. Ad-  
dresses incremented internally in  
conjunction with the state of  
MODE.  
Burst Write  
Operation  
Internal  
X
0
1
X
Valid  
L-H  
Burst Write operation. Previous ac-  
cess was a Write operation. Ad-  
dresses incremented internally in  
conjunction with the state of  
MODE. Bytes written are deter-  
mined by BWS[3:0]  
.
Notes:  
1. X=”Don't Care”, 1=Logic HIGH, 0=Logic LOW, CE stands for ALL Chip Enables active. BWS = 0 signifies at least one Byte Write Select is active, BWS  
=
x
x
Valid signifies that the desired byte write selects are asserted, see Write Cycle Description table for details.  
2. Write is defined by WE and BWS  
3. The DQ and DP pins are controlled by the current cycle and the OE signal.  
4. CEN=1 inserts wait states.  
5. Device will power-up deselected and the I/Os in a three-state condition, regardless of OE.  
6. OE assumed LOW.  
. See Write Cycle Description table for details.  
[3:0]  
Document #: 38-05246 Rev. **  
Page 5 of 14  
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