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WCSN0436V1P-133AC 参数 Datasheet PDF下载

WCSN0436V1P-133AC图片预览
型号: WCSN0436V1P-133AC
PDF下载: 下载PDF文件 查看货源
内容描述: 128Kx36流水线SRAM与NOBL TM架构 [128Kx36 Pipelined SRAM with NoBL TM Architecture]
分类和应用: 静态存储器
文件页数/大小: 14 页 / 285 K
品牌: WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
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WCSN0436V1P  
Switching Waveforms (continued)  
Burst Sequences  
CLK  
tCYC  
tALH  
tALS  
ADV/LD  
tCL  
tCH  
tAH  
tAS  
RA1  
WA2  
ADDRESS  
WE  
RA3  
tWS  
tWH  
tWS  
tWH  
BWS[3:0]  
tCES  
tCEH  
CE  
tCLZ  
tCHZ  
tDH  
tDOH  
tCLZ  
Q3  
Out  
Data-  
In/Out  
Q1  
Q1+2  
Out  
Q1+3  
Out  
D2  
In  
D2+2  
In  
D2+3  
In  
Q1+1  
Out  
D2+1  
In  
Out  
Device  
originally  
deselected  
tCO  
tCO  
tDS  
The combination of WE & BWS[3:0] define a write cycle (see Write Cycle Description table).  
CE is the combination of CE1, CE2, and CE3. All chip enables need to be active in order to select  
the device. Any chip enable can deselect the device. RAx stands for Read Address X, WA stands for  
Write Address X, Dx stands for Data-in for location X, Qx stands for Data-out for location X. CEN held  
LOW. During burst writes, byte writes can be conducted by asserting the appropriate BWS[3:0] input signals.  
Burst order determined by the state of the MODE input. CEN held LOW. OE held LOW.  
= UNDEFINED  
= DON’T CARE  
Document #: 38-05246 Rev. **  
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