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WED9LC6816V1312BI 参数 Datasheet PDF下载

WED9LC6816V1312BI图片预览
型号: WED9LC6816V1312BI
PDF下载: 下载PDF文件 查看货源
内容描述: 256Kx32 SSRAM / SDRAM 4Mx32 [256Kx32 SSRAM/4Mx32 SDRAM]
分类和应用: 存储内存集成电路静态存储器动态存储器
文件页数/大小: 27 页 / 1138 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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WED9LC6816V  
White Electronic Designs  
Clock Frequency and Latency Parameters - 125MHz SDRAM  
(Unit = number of clock)  
tRC  
70ns  
tRAS  
50ns  
tRP  
20ns  
tRRD  
20ns  
tRCD  
20ns  
tCCD  
10ns  
tCDL  
10ns  
tRDL  
10ns  
CAS  
Latency  
Frequency  
125MHz (8.0ns)  
100MHz (10.0ns)  
83MHz (12.0ns)  
3
3
2
9
7
6
6
5
4
3
2
2
2
2
2
3
2
2
1
1
1
1
1
1
1
1
1
Clock Frequency and Latency Parameters - 100MHz SDRAM  
(Unit = number of clock)  
tRC  
70ns  
7
tRAS  
50ns  
5
tRP  
tRRD  
tRCD  
20ns  
2
tCCD  
10ns  
1
tCDL  
10ns  
1
tRDL  
10ns  
1
CAS  
Latency  
Frequency  
20ns 20ns  
100MHz (12.0ns)  
83MHz (12.0ns)  
3
2
2
2
2
2
6
5
2
1
1
Refresh Cycle Parameters  
-10  
-12  
Parameter  
Symbol  
Min  
Max  
Min  
Max  
Units  
ms  
Refresh Period (1,2)  
tREF  
64  
64  
NOTES:  
1. 4096 cycles  
2. Any time that the Refresh Period has been exceeded, a minimum of two Auto (CBR) Refresh commands must be given to  
"wake-up" the device.  
SDRAM Command Truth Table  
SDA10  
A11-0  
Function  
SDCE# SDRAS# SDCAS# SDWE # BWE# A12, A13  
Notes  
Mode Register Set  
Auto Refresh (CBR)  
L
L
L
L
L
L
H
L
X
X
X
X
X
X
X
X
X
X
X
X
L
OP CODE  
L
X
BA  
X
X
Single Bank  
L
L
L
L
L
L
L
L
L
H
X
X
L
H
H
H
L
L
2
Precharge  
Precharge all Banks  
L
L
H
Bank Activate  
L
H
L
BA  
BA  
BA  
BA  
BA  
X
Row Address  
2
2
2
2
2
3
Write  
H
H
H
H
H
H
X
X
X
L
H
L
Write with Auto Precharge  
Read  
L
L
L
L
Read with Auto Precharge  
Burst Termination  
No Operation  
L
H
L
H
X
X
X
X
X
H
H
X
X
X
H
X
X
X
X
Device Deselect  
Data Write/Output Disable  
X
X
4
4
Data Mask/Output Disable  
H
X
NOTES:  
1. All of the SDRAM operations are defined by states of SDCE#, SDWE#, SDRAS#, SDCAS#, and BWE0-3# at the positive rising edge of the clock.  
2. Bank Select (BA), A12 (BA0) and A13 (BA1) select between different banks.  
3. During a Burst Write cycle there is a zero clock delay, for a Burst Read cycle the delay is equal to the CAS latency.  
4. The BWE# has two functions for the data DQ Read and Write operations. During a Read cycle, when BWE# goes high at a clock timing the data outputs are disabled  
and become high impedance after a two clock delay. BWE# also provides a data mask function for Write cycles. When it activates, the Write operation at the clock is  
prohibited (zero clock latency).  
Contact factory for ordering information.  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
September, 2003  
Rev. 1  
9
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
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