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WED9LC6816V1312BI 参数 Datasheet PDF下载

WED9LC6816V1312BI图片预览
型号: WED9LC6816V1312BI
PDF下载: 下载PDF文件 查看货源
内容描述: 256Kx32 SSRAM / SDRAM 4Mx32 [256Kx32 SSRAM/4Mx32 SDRAM]
分类和应用: 存储内存集成电路静态存储器动态存储器
文件页数/大小: 27 页 / 1138 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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WED9LC6816V  
White Electronic Designs  
Absolute Maximum Ratings  
Recommended DC Operating Conditions  
(Vcc = 3.3V -5% / +10% unless otherwise noted;  
0°C Ta 70°C, Commercial; -40°C Ta 85°C, Industrial)  
Voltage on VCC Relative to VSS  
-0.5V to +4.6V  
-0.5V to Vcc +0.5V  
-55°C to +125°C  
+150°C  
VIN (DQx)  
Parameter  
Symbol Min  
Max  
3.6  
Units  
Storage Temperature (BGA)  
Junction Temperature  
Short Circuit Output Current  
Supply Voltage (1)  
Input High Voltage (1,2)  
Input Low Voltage (1,2)  
VCC  
VIH  
VIL  
ILI  
3.135  
2.0  
V
V
V
A
VCC +0.3  
0.8  
100 mA  
-0.3  
-10  
Input Leakage Current  
10  
*Stress greater than those listed under "Absolute Maximum Ratings" may cause  
permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions greater than those indicated  
in operational sections of this specifications is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect reliability.  
0 VIN VCC  
Output Leakage (Output Disabled)  
ILO  
-10  
10  
A
0 VIN VCC  
SSRAM Output High (IOH = -4mA) (1)  
SSRAM Output Low (IOL = 8mA) (1)  
SDRAM Output High (IOH = -2mA)  
SDRAM Output Low (IOL = 2mA)  
VOH  
VOL  
VOH  
VOL  
2.4  
0.4  
V
V
V
V
2.4  
0.4  
NOTES:  
1. All voltages referenced to VSS (GND).  
2. Overshoot: VIH +6.0V for t tKC/2 Underershoot: VIL -2.0V for  
t tKC/2  
DC Electrical Characteristics  
(Vcc = 3.3V -5% / +10% unless otherwise noted; 0°C Ta 70°C, Commercial; -40°C Ta 85°C, Industrial)  
Description  
Conditions  
Symbol Frequency  
Typ  
500  
500  
550  
600  
325  
350  
400  
450  
500  
500  
550  
Max  
625  
650  
700  
800  
425  
450  
495  
585  
625  
650  
700  
Units  
133MHz  
150MHz  
ICC1  
Power Supply Current  
Operating (1, 2, 3)  
SSRAM Active / DRAM Auto Refresh  
mA  
166MHz  
200MHz  
133MHz  
150MHz  
ICC2  
Power Supply Current  
Operating (1, 2, 3)  
SSRAM Active / DRAM Idle  
SSRAM Active / SSRAM Idle  
mA  
166MHz  
200MHz  
83MHz  
Power Supply Current  
Operating (1, 2, 3)  
ICC3  
100MHz  
125MHz  
mA  
mA  
SSCE# and SDCE# VCC -0.2V,  
All other inputs at VSS +0.2 VIN or  
VIN VCC -0.2V, Clk frequency = 0  
CMOS Standby  
ISB1  
20.0  
40.0  
SSCE# and SDCE# VIH min  
All other inputs at VIL max VIN or  
VIN VCC -0.2V, CK# frequency = 0  
TTL Standby  
Auto Refresh  
ISB2  
ICC5  
30.0  
250  
55.0  
300  
mA  
mA  
NOTES:  
1. ICC (operating) is specified with no output current. ICC (operating) increases with faster cycle times and greater output loading.  
2. "Device idle" means device is deselected (CE# = VIH) Clock is running at max frequency and Addresses are switching each cycle.  
3. Typical values are measured at 3.3V, 25°C. ICC (operating) is specified at specified frequency.  
Contact factory for ordering information.  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
September, 2003  
Rev. 1  
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com