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WED9LC6816V1312BI 参数 Datasheet PDF下载

WED9LC6816V1312BI图片预览
型号: WED9LC6816V1312BI
PDF下载: 下载PDF文件 查看货源
内容描述: 256Kx32 SSRAM / SDRAM 4Mx32 [256Kx32 SSRAM/4Mx32 SDRAM]
分类和应用: 存储内存集成电路静态存储器动态存储器
文件页数/大小: 27 页 / 1138 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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WED9LC6816V  
White Electronic Designs  
Output Functional Descriptions  
Symbol  
Type  
Signal  
Polarity  
Function  
SSCK#  
Input  
Pulse  
Positive Edge The system clock input. All of the SSRAM inputs are sampled on the rising edge of the clock.  
SSADS#  
SSOE#  
SSWE#  
When sampled at the positive rising edge of the clock, SSADS#, SSOE#, and SSWE# define  
the operation to be executed by the SSRAM.  
Input  
Pulse  
Active Low  
SSCE#  
SDCK#  
Input  
Input  
Pulse  
Pulse  
Active Low  
SSCE# disable or enable SSRAM device operation.  
Positive Edge The system clock input. All of the SDRAM inputs are sampled on the rising edge of the clock.  
SDCE disable or enable device operation by masking or enabling all inputs except SDCK# and BWE0-3.  
SDCE  
Input  
Pulse  
Active Low  
Active Low  
SDRAS#  
SDCAS#  
SDWE#  
When sampled at the positive rising edge of the clock, SDCAS#, SDRAS#, and SDWE#  
define the operation to be executed by the SDRAM.  
Input  
Pulse  
Address bus for SSRAM and SDRAM  
A0 and A1 are the burst address inputs for the SSRAM  
During a Bank Active command cycle, A0-11, SDA10 defines the row address (RA0-10) when  
sampled at the rising clock edge.  
During a Read or Write command cycle, A0-7 defines the column address (CA0-7) when  
sampled at the rising clock edge. In addition to the row address, SDA10 is used to invoke  
Autoprecharge operation at the end of the Burst Read or Write Cycle. If SDA10 is high,  
autoprecharge is selected and A12 and A13 define the bank to be precharged. If SDA10 is low,  
autoprecharge is disabled.  
A0-17  
SDA10  
Input  
Level  
During a Precharge command cycle, SDA10 is used in conjunction with A12 and A13 to control  
which bank(s) to precharge. If SDA10 is high, all banks will be precharged regardless of  
the state of A12 and A13. If SDA10 is low, then A12 and A13 are used to define which bank to  
precharge.  
Input  
Output  
Data Input/Output are multiplexed on the same pins.  
Level  
Pulse  
DQ0-31  
BWE0-3  
VCC, VSS  
BWE0-3 perform the byte write enable function for the SSRAM and DQM function for the SDRAM BWE0 is  
associated with DQ0-7, BWE1 with DQ8-15, BWE2 with DQ16-23 and BWE3 with DQ24-31  
Input  
.
Power and ground for the input buffers and the core logic.  
Supply  
,
VCCQ  
Supply  
Data base power supply pins, 3.3V (2.5V future).  
Contact factory for ordering information.  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
September, 2003  
Rev. 1  
3
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com