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W332M72V-133SBM 参数 Datasheet PDF下载

W332M72V-133SBM图片预览
型号: W332M72V-133SBM
PDF下载: 下载PDF文件 查看货源
内容描述: 32Mx72同步DRAM [32Mx72 Synchronous DRAM]
分类和应用: 存储内存集成电路动态存储器
文件页数/大小: 15 页 / 473 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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W332M72V-XSBX  
White Electronic Designs  
TRUTH TABLE - COMMANDS AND DQM OPERATION (NOTE 1)  
NAME (FUNCTION)  
CS#  
H
L
RAS#  
CAS#  
WE#  
X
DQM  
X
ADDR  
I/Os  
COMMAND INHIBIT (NOP)  
X
H
L
X
H
H
L
X
X
X
NO OPERATION (NOP)  
H
H
H
L
X
X
ACTIVE (Select bank and activate row) ( 3)  
READ (Select bank and column, and start READ burst) (4)  
WRITE (Select bank and column, and start WRITE burst) (4)  
BURST TERMINATE  
L
X
Bank/Row  
X
L
H
H
H
L
L/H 8  
L/H 8  
X
Bank/Col  
X
L
L
Bank/Col  
Valid  
Active  
X
L
H
H
L
L
X
PRECHARGE (Deactivate row in bank or banks) ( 5)  
AUTO REFRESH or SELF REFRESH (Enter self refresh mode) (6, 7)  
LOAD MODE REGISTER (2)  
L
L
X
Code  
L
L
H
L
X
X
X
L
L
L
X
Op-Code  
X
Write Enable/Output Enable (8)  
L
Active  
High-Z  
Write Inhibit/Output High-Z (8)  
H
NOTES:  
5. A10 LOW: BA0, BA1 determine the bank being precharged. A10 HIGH: All banks  
precharged and BA0, BA1 are “Don’t Care.”  
6. This command is AUTO REFRESH if CKE is HIGH; SELF REFRESH if CKE is  
LOW.  
1. CKE is HIGH for all commands shown except SELF REFRESH.  
2. A0-11 dene the op-code written to the Mode Register and A12 should be driven  
low.  
3. A0-12 provide row address, and BA0, BA1 determine which bank is made active.  
4. A0-9 provide column address; A10 HIGH enables the auto precharge feature  
(nonpersistent), while A10 LOW disables the auto precharge feature; BA0, BA1  
determine which bank is being read from or written to.  
7. Internal refresh counter controls row addressing; all inputs and I/Os are “Don’t  
Care” except for CKE.  
8. Activates or deactivates the I/Os during WRITEs (zero-clock delay) and READs  
(two-clock delay).  
command can only be issued when all banks are idle, and  
a subsequent executable command cannot be issued until  
COMMANDS  
The Truth Table provides a quick reference of available  
commands. This is followed by a written description of each  
command. Three additional Truth Tables appear following  
the Operation section; these tables provide current state/  
next state information.  
tMRD is met.  
ACTIVE  
The ACTIVE command is used to open (or activate) a  
row in a particular bank for a subsequent access. The  
value on the BA0, BA1 inputs selects the bank, and the  
address provided on inputsA0-12 selects the row. This row  
remains active (or open) for accesses until a PRECHARGE  
command is issued to that bank. A PRECHARGE  
command must be issued before opening a different row  
in the same bank.  
COMMAND INHIBIT  
The COMMAND INHIBITfunction prevents new commands  
from being executed by the SDRAM, regardless of whether  
the CLK signal is enabled. The SDRAM is effectively  
deselected. Operations already in progress are not  
affected.  
READ  
NO OPERATION (NOP)  
The READ command is used to initiate a burst read  
access to an active row. The value on the BA0, BA1 inputs  
selects the bank, and the address provided on inputsA0-9  
selects the starting column location. The value on input  
A10 determines whether or not AUTO PRECHARGE is  
used. If AUTO PRECHARGE is selected, the row being  
accessed will be precharged at the end of the READ  
burst; if AUTO PRECHARGE is not selected, the row will  
remain open for subsequent accesses. Read data appears  
on the I/Os subject to the logic level on the DQM inputs  
The NO OPERATION (NOP) command is used to perform  
a NOP to an SDRAM which is selected (CS# is LOW).  
This prevents unwanted commands from being registered  
during idle or wait states. Operations already in progress  
are not affected.  
LOAD MODE REGISTER  
The Mode Register is loaded via inputs A0-11 (A12  
should be driven low). See Mode Register heading in the  
Register Denition section. The LOAD MODE REGISTER  
Ju;y 2006  
Rev. 3  
7
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com