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VG37648041AT 参数 Datasheet PDF下载

VG37648041AT图片预览
型号: VG37648041AT
PDF下载: 下载PDF文件 查看货源
内容描述: 256M : X4,X8 , X16 CMOS同步动态RAM [256M:x4, x8, x16 CMOS Synchronous Dynamic RAM]
分类和应用:
文件页数/大小: 86 页 / 964 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
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Preliminary  
VG37648041AT  
256M:x4, x8, x16  
VIS  
CMOS Synchronous Dynamic RAM  
AUTO REFRESH MODE  
t
t
t
CH  
CL  
CK  
CLK#  
CLK  
t
t
IS IH  
CKE  
VALID  
NOP  
VALID  
t
t
IS  
IH  
PRE  
AR  
NOP  
NOP  
NOP  
ACT  
NOP  
NOP  
AR  
COMMAND  
A0-A8  
RA  
RA  
A9,A11,A12  
ALL BANKS  
ONE BANK  
A10  
RA  
BA  
t
t
IS  
IH  
*Bank(s)  
BA0,BA1  
DQS  
DQ  
DM  
t
t
t
RC  
RC  
RP  
DONT’ CARE  
UNDEFINED  
DIS AP=Disable Autoprecharge  
*=*Dont’ Care, if A10 is HIGH at this point; A10 must be HIGH if more than one bank is active(i.e. must pre-  
charge all active banks)  
PRE=PRECHARGE, ACT=ACTIVE, RA=Row Address, BA=Bank Address, AR=AUTOREFRESH  
NOP commands are shown for ease of illustration; other valid commands may be possible at these times  
DM, DQ and DQS signals are all *Dont’ Care/High-Z for operations shown  
Document : 1G5-0157  
Rev.1  
Page78  
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