VG37648041AT 参数 Datasheet PDF下载

型号：	VG37648041AT
PDF下载：	下载PDF文件查看货源
内容描述：	256M ： X4，X8 ， X16 CMOS同步动态RAM [256M:x4, x8, x16 CMOS Synchronous Dynamic RAM]
分类和应用：
文件页数/大小：	86 页 / 964 K
品牌：	VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]

Preliminary

VG37648041AT

256M:x4, x8, x16

VIS

CMOS Synchronous Dynamic RAM

20.The minimum limit for this parameter is not a device limit. The device will operate with a negative value for

this parameter, but system performance (bus turnaround) will degrade accordingly.

21.CLK must be toggled a minimum of two times during this period.

22.The specific reguirement is that DQS be valid (HIGH or LOW) on or befor this CLK edge. The case shown

(DQS going from High-Z to logic LOW) applies when no writes were previously in progress on the bus. If

a previous write was in progress. DQS could be HIGH at this time depending on tDSS.

Document : 1G5-0157

Rev.1

Page73