Preliminary
VG37648041AT
256M:x4, x8, x16
VIS
CMOS Synchronous Dynamic RAM
Capacitance
(Ta=25°C, f=1MHZ)
Parameter
Symbol
C11
Typ
2.5
Max
3.5
Unit
pF
NOTES
13
Input capacitance: CLK, CLK#
Input capacitance (all input pins except data pins)
Data input/output capacitance: DQs, DQS, DM
C12
2.5
4.0
3.5
5.5
pF
pF
13
13
CI/O
Recommended Electrical Characteristic and D.C. Operating Conditions (VDDQ=+2.5±0.2V ,VDD=3.3V, Ta=0-70°C
Max Unit Notes
-75
Description/test condition
Symbol
ICC1
-8
Operating Current: Active Mode
t ³ t , Burst=4, READ or Write
R
RC(MIN )
CL=2.5, tCK=7ns for -8
Precharge Standby Current: Power-down mode, All banks idle
ICC2P
20
30
CKE ³ VIL(MAX )
CL=2.5, tCK=7ns for -8
ICC2N
Precharge Standby Current: CS ³ V (MIN), All banks idle
mA
IH
CKE ³ VIL(MIN )
CL=2.5, tCK=7ns for -8
ICC3
Active Standby Current: CS ³ V (MIN), All banks active after tRAS
IH
met, no access in progress
CKE £ VIL(MIN )
CL=2.5, tCK=7ns for -8
Operating Current:
ICC4
180
Burst=4, Continue burst
CKE £ CIL(MAX ) READ or WRITE, All banks active, address
transition once per clock cycle;
CL=2.5, tCK=7ns for-8
Auto refresh Current:
ICC5
ICC6
210
2
t
³ t
RC RC(MI N )
11
Self Refresh Current: CKE £ 0.2V
Document : 1G5-0157
Rev.1
Page69
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
