欢迎访问ic37.com |
会员登录 免费注册
发布采购

VG3617161DT-7 参数 Datasheet PDF下载

VG3617161DT-7图片预览
型号: VG3617161DT-7
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mb的CMOS同步动态RAM [16Mb CMOS Synchronous Dynamic RAM]
分类和应用: 内存集成电路光电二极管动态存储器时钟
文件页数/大小: 70 页 / 942 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
 浏览型号VG3617161DT-7的Datasheet PDF文件第22页浏览型号VG3617161DT-7的Datasheet PDF文件第23页浏览型号VG3617161DT-7的Datasheet PDF文件第24页浏览型号VG3617161DT-7的Datasheet PDF文件第25页浏览型号VG3617161DT-7的Datasheet PDF文件第27页浏览型号VG3617161DT-7的Datasheet PDF文件第28页浏览型号VG3617161DT-7的Datasheet PDF文件第29页浏览型号VG3617161DT-7的Datasheet PDF文件第30页  
Preliminary  
VG3617161DT  
16Mb CMOS Synchronous Dynamic RAM  
VIS  
10.2 PRECHARGE TERMINATION  
10.2.1 PRECHARGE TERMINATION in READ Cycle  
During a READ cycle, the BURST READ operation can be terminated by a PRECHARGE  
command. When the PRECHARGE command is asserted, the BURST READ operation is termi-  
nated and PRECHARGE starts.  
Read data will remain valid until one clock(CAS latency of 2)or two clocks(CAS latency of 3)  
after the PRECHARGE command and the same bank can be activated again after t  
from  
RP(min)  
the PRECHARGE command.  
PRECHARGE TERMINATION in READ Cycle  
Burst lengh= X  
T0  
T1  
T3  
T6  
T8  
T2  
T4  
T5  
T7  
CLK  
Read  
PRE  
Q2  
ACT  
Command  
CAS latency=2  
DQ  
Hi-Z  
Q0  
Q3  
tRP  
Q1  
command  
ACT  
Read  
PRE  
tRP  
CAS latency=3  
DQ  
Hi-Z  
Q0  
Q3  
Q2  
Q1  
Document:1G5-0160  
Rev.1  
Page 26  
 复制成功!