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VG3617161DT-7 参数 Datasheet PDF下载

VG3617161DT-7图片预览
型号: VG3617161DT-7
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mb的CMOS同步动态RAM [16Mb CMOS Synchronous Dynamic RAM]
分类和应用: 内存集成电路光电二极管动态存储器时钟
文件页数/大小: 70 页 / 942 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
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Preliminary  
VG3617161DT  
16Mb CMOS Synchronous Dynamic RAM  
VIS  
9.3 WRITE to READ Command Interval  
The WRITE command to READ command interval is a minimum of 1 cycle. Only the WRITE data pre-  
ceding the READ command will be written. The data bus must be in high-impedance at least one cycle prior  
to the first D  
.
OUT  
WRITE to READ Command Interval  
Burst lengh=4  
T7  
T0  
T1  
T3  
T6  
T8  
T2  
T4  
T5  
CLK  
1 cycle  
Read B  
Command  
WRITE A  
CAS latency=2  
Hi-Z  
DA0  
QB0  
QB1  
QB2  
QB3  
DQ  
Write A  
DA0  
Command  
Read B  
CAS latency=3  
DQ  
Hi-Z  
QB0  
QB1  
QB3  
QB2  
9.4 READ to WRITE Command Interval  
During READ cycle, READ can be interrupted by WRITE. The data bus must be in high-impedance  
using DQM before the WRITE command. DQM must be high at least 3 clocks prior to the WRITE command.  
This restriction is necessary to avoid a data bus conflict.  
Document:1G5-0160  
Rev.1  
Page 23  
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