Preliminary
VG3617161DT
16Mb CMOS Synchronous Dynamic RAM
VIS
AC Parameters for Write Timing (1 of 2)
Burst Length=4, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
t
t
CK2
CL
t
CH
Begin Auto Precharge
Bank A
Begin Auto Precharge
Bank B
t
t
CMS
t
CKH
t
CKS
CMH
CS
RAS
CAS
WE
A11(BS)
A10
RAa
RAa
RBa
RBa
RAc
RAc
RAb
RBb
t
AH
t
AS
A0~A9
CAa
RBb
CBa
CAb
RAb
DQM
DQ
t
RCD
t
t
t
DS
RRD
DAL
t
t
t
RC
DPL
t
RP
DH
DBa2
DAa3
DBa0 DBa1
DAb1
DAb3
DAb2
DAa1
DBa3 DAb0
DAa0
DAa2
Activate
Command
Bank A
Precharge
Command
Bank A
Activate
Command
Bank B
Write with
Activate
Write with
Activate
Command
Write with
Activate
Command
Bank B
Auto Precharge
Command
Bank A
Command
Auto Precharge
Command
Bank A
Auto Precharge
Command
Bank B
Bank A
Bank A
Document:1G5-0160
Rev.1
Page 30
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
