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VG3617161DT-7 参数 Datasheet PDF下载

VG3617161DT-7图片预览
型号: VG3617161DT-7
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mb的CMOS同步动态RAM [16Mb CMOS Synchronous Dynamic RAM]
分类和应用: 内存集成电路光电二极管动态存储器时钟
文件页数/大小: 70 页 / 942 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
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Preliminary  
VG3617161DT  
16Mb CMOS Synchronous Dynamic RAM  
VIS  
9.READ/WRITE Command Interval  
9.1 READ to READ command interval  
When a new READ command is asserted during a READ cycle, it will be effective after the CAS latency,  
even if the previous READ operation has not completed. READ will be interrupted by another READ.  
A READ command can be asserted in every clock without restriction.  
READ to READ Command Interval  
Burst lengh=4, CAS latency=2  
T6  
T0  
T1  
T3  
T2  
T4  
T5  
T7  
T8  
CLK  
Read B  
Read A  
Command  
Hi-Z_  
DQ  
QA0  
QB0  
QB1  
QB2  
QB3  
1 cycle  
9.2 WRITE to WRITE Command Interval  
When a new WRITE command is asserted during a WRITE cycle, the previous burst will be terminated  
and the new burst will begin with the new WRITE command. WRITE will be interrupted by another WRITE.  
A WRITE command can be asserted in every clock without restriction.  
WRITE to WRITE Command Interval  
Burst lengh=4, CAS latency=2  
T0  
T1  
T3  
T6  
T7  
T2  
T4  
T5  
T8  
CLK  
Write B  
Write A  
Command  
Hi-Z_  
DQ  
QA0  
QB0  
QB1  
QB2  
QB3  
1 cycle  
Document:1G5-0160  
Rev.1  
Page 22  
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