欢迎访问ic37.com |
会员登录 免费注册
发布采购

VG3617161DT-7 参数 Datasheet PDF下载

VG3617161DT-7图片预览
型号: VG3617161DT-7
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mb的CMOS同步动态RAM [16Mb CMOS Synchronous Dynamic RAM]
分类和应用: 内存集成电路光电二极管动态存储器时钟
文件页数/大小: 70 页 / 942 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
 浏览型号VG3617161DT-7的Datasheet PDF文件第17页浏览型号VG3617161DT-7的Datasheet PDF文件第18页浏览型号VG3617161DT-7的Datasheet PDF文件第19页浏览型号VG3617161DT-7的Datasheet PDF文件第20页浏览型号VG3617161DT-7的Datasheet PDF文件第22页浏览型号VG3617161DT-7的Datasheet PDF文件第23页浏览型号VG3617161DT-7的Datasheet PDF文件第24页浏览型号VG3617161DT-7的Datasheet PDF文件第25页  
Preliminary  
VG3617161DT  
16Mb CMOS Synchronous Dynamic RAM  
VIS  
8.2 WRITE with AUTO PRECHARGE  
During a WRITA cycle, the AUTO PRECHARGE starts at tDPL(min.) after the last data word input to  
the device  
WRITE with AUTO PRECHRGE  
Burst lengh=4  
T7  
T0  
T1  
T3  
T6  
T8  
T2  
T4  
T5  
CLK  
Command  
WRITA B  
AUTO PRECHARGE starts  
tDPL  
CAS latency=2  
DQ  
Hi-Z_  
DB0  
DB1  
DB2  
DB3  
AUTO PRECHARGE starts  
WRITA B  
DB0  
Command  
tDPL  
CAS latency=3  
Hi-Z  
DQ  
DB1  
DB3  
DB2  
Remark WRITA means WRITE with AUTO PRECHARGE  
In summary, the auto precharge cycle begins relative to a reference clock that indicates the last data word is  
valid.  
In the table below, minus means clocks before the reference; plus means clocks after the reference.  
CAS latency  
2
READ  
-1  
WRITE  
+tDPL(min.)  
3
-2  
+tDPL(min)  
Document:1G5-0160  
Rev.1  
Page 21  
 复制成功!