VG3617161ET
1,048,576 x 16 - Bit
CMOS Synchronous Dynamic RAM
VIS
Ordering information
Part Number
Frequency@CL3
Package
VG3617161ET-6
VG3617161ET-7
VG3617161ET-8
166MHz
143MHz
125MHz
400mil
50-Pin
Plastic TSOPII
VG3617161ET- 6
• VG
• 36
• 17161
• E
• VIS Memory Product
• Technology/Design Rule
• Device Type/Configuration
• Mask/Design Version
• T
• Package Type, T: TSOP
• Cycle time, 6: 6ns, 7: 7ns, 8: 8ns
• 6
Packaging Information
• 400mil, 50-Pin Plastic TSOP
MILLIMETERS
INCHES
DIM
50
26
RAD R1
MIN.
---
NOM.
MAX.
MIN.
---
NOM.
---
MAX.
0.047
0.006
0.041
0.018
0.016
0.008
0.006
0.830
A
A1
A2
b
---
1.20
0.15
1.05
0.45
0.40
0.21
0.16
RAD R
A2
0.05
0.95
0.30
0.30
0.12
0.11
20.82
---
1.00
0.002
0.037
0.012
0.012
0.005
0.0045
0.820
---
0.039
---
c
B
---
---
b1
c
---
E1
B
A1
L
---
---
0°~5°
DETAIL A
---
c1
D
---
20.95
0.875 REF.
0.80 BASIC
11.76
10.16
0.50
21.08
0.825
b
ZD
0.0344 REF.
SECTION B-B
b1
e
0.0315 BASIC
1
25
11.56
11.96
10.29
0.60
0.25
---
0.455
0.463
0.400
0.020
---
0.471
0.405
0.024
0.010
---
E
E1 10.03
0.395
0.016
0.004
0.004
c
D
c1
L
0.40
0.11
0.11
R
---
BASE METAL
---
---
R1
WITH PLATING
DETAIL A
ZD
NOTE:
1. CONTROLLING DIMENSION : MILLIMETERS
2. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION.
A
MOLD PROTRUSION SHALL NOT EXCEED 0.15mm(0.006") PER SIDE.
DIMENSION E1 DOES NOT INCLUDE INTERLEAD PROTRUSION.
INTERLEAD PROTRUSION SHALL NOT EXCEED 0.25mm(0.01") PER SIDE.
E
b
48- e
0.100(0.004)
3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSIONS/INTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL NOT CAUSE THE LEAD TO
BE WIDER THAN THE MAX b DIMENSION BY MORE THAN 0.13mm.
DAMBAR INTRUSION SHALL NOT CAUSE THE LEAD TO BE NARROWER
THAN THE MIN b DIMENSION BY MORE THAN 0.07mm.
SEATING PLANE
Document:1G5-0189
Rev.1
Page69
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
