VG3617161ET
1,048,576 x 16 - Bit
CMOS Synchronous Dynamic RAM
VIS
AC Parameters for Read Timing (2 of 2)
Burst Length=2, CAS Latency=3
T0
T1
T2
T3 T4
T5 T6
T7 T8
T9 T10 T11 T12 T13 T14 T15
CLK
t
t
t
CH
CL
CK3
Begin Auto
Precharge
Bank B
t
CMS
CKE
CS
t
CKS
t
t
CMH
CKH
RAS
CAS
WE
A11(BS)
RBa
RAb
A10
RAa
t
AH
t
AS
A0-A9
CAa
RAb
RAa
CBa
RBa
t
RRD
t
t
RAS
RP
t
RC
DQM
DQ
t
t
t
AC3
HZ
AC3
t
t
t
t
t
OH
OH
RCD
LZ
HZ
Hi-Z
QBa0
QBa1
QAa0
QAa1
Activate
Command
Bank A
Read with
Auto Precharge
Command
Bank B
Precharge
Command
Bank A
Activate
Command
Bank A
Activate
Command
Bank B
Read
Command
Bank A
Document:1G5-0189
Rev.1
Page32
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
