VG26(V)(S)17400FJ
4,194,304 x 4 - Bit
CMOS Dynamic RAM
VIS
DC Characteristics; 5 - Volt verion
(Ta= 0 to 70°C, VCC = + 5V±10%, Vss = 0V)
VG26 (V) (S) 17400E
-5 -6
Min Max Min Max
Parameter
Operating
Symbol
Test Conditions
RAS cycling
Unit Notes
current
ICC1 CAS cycling
tRC = min.
-
-
145
2
-
-
135 mA
1, 2
Low
TTL interface
2
power
S - version
RAS, CAS = VIH
mA
mA
Dout = high - Z
CMOS interface
RAS, CAS ³ V
-
0.25
-
0.25
- 0.2V
CC
Dout = high - Z
Standby
Current
ICC2
Standard
power
version
TTL interface
RAS, CAS = VIH
-
-
2
1
-
-
2
1
mA
mA
Dout = high - Z
CMOS interface
RAS, CAS ³ V
- 0.2V
CC
Dout = high - Z
RAS - only
refresh current
ICC3 RAS cycling, CAS = VIH
tRC = min.
-
145
-
135
1, 2
mA
mA
Fast page mode
current
ICC4
-
-
100
145
-
-
90
1,3
tPC = min.
CAS - before - RAS
refresh current
ICC5 tRC = min.
RAS, CAS cycling
135
1, 2
mA
Self - refresh currant
(S - Version)
ICC8
-
-
350
500
-
-
350
500
t
³ 100mS
mA
RASS
CAS - before - RAS
long refresh
current (S - Version)
ICC9
mA
Standby : VCC - 0.2V £ RAS
CAS before RAS refresh :
2048 cycles/128ms
RAS, RAS : 0V £ V £ 0.2V
IL
VCC - 0.2V £ V £ V (Max)
IH
IH
Dout = high - Z, t
£ 300ns
RAS
Document :
Rev.
Page6
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
