VG26(V)(S)17400FJ
4,194,304 x 4 - Bit
CMOS Dynamic RAM
VIS
Absolute Maximum Rating
Parameter
Symbol
VT
Value
Unit
V
Voltage on any pin relative to Vss
5V
3.3V
-1.0 to + 7.0
-0.5 to + 4.6
Supply voltage relative to Vss
5V
3.3V
Vcc
-1.0 to + 7.0
-0.5 to + 4.6
V
Short circuit output current
Power dissipation
IOUT
PD
50
1.0
mA
W
Operating temperature
Storage temperature
TOPT
TSTG
0 to + 70
-55 to + 125
°C
°C
Recommended DC Operating Conditions
Parameter/Condition
Symbol
5 Volt Version
3.3 Volt Version
Unit
V
Min
4.5
Typ
5.0
Max
5.5
Min
Typ
3.3
Max
3.6
Supply Voltage
Vcc
VIH
VIL
3.15
Input High Voltage, all inputs
Input Low Voltage, all inputs
2.4
-
-
VCC + 1.0
0.8
2.0
-
-
VCC + 0.3
0.8
V
V
-1.0
-0.3
Capacitance
Ta = 25°C, VCC = 5V±10 % or 3.3V(+10%,-5%), f = 1MHz
Parameter
Symbol
Cl1
Typ
Max
Unit
pF
Note
1
Input capacitance (Address)
-
5
7
Input capacitance
Cl2
-
pF
1
(RAS, CAS, OE, WE)
Output capacitance
(Data - in, Data - out)
CI/O
-
7
pF
1,2
Note : 1. Capacitance measured with effective capacitance measuring method.
2. CAS = VIH to disable Dout.
Document :
Rev.
Page5
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
