VG26(V)(S)17400FJ
4,194,304 x 4 - Bit
CMOS Dynamic RAM
VIS
Truth Table
ADDRESSES
ROW COL
DQS
FUNCTION
RAS
H
CAS
WE
X
OE
X
Notes
STANDBY
READ
X
X
High - Z
H ® X
L
L
L
L
H
L
L
ROW COL Data - Out
ROW COL Data - In
WRITE : (EARLY
WRITE)
X
READ WRITE
L
L
ROW COL Data - Out, Data - In
ROW COL Data - Out
H ® L L ® H
PAGE -
MODE READ
1st Cycle
L
L
H
H
L
L
H ® L
H ® L
2st
n/a
COL Data - Out
Cycle
PAGE -
MODE WRITE
1st Cycle
L
L
L
L
X
X
ROW COL Data - In
n/a COL Data - In
H ® L
H ® L
2st
Cycle
PAGE - MODE 1st Cycle
L
L
ROW COL Data - Out, Data - In
n/a COL Data - Out, Data - In
H ® L H ® L L ® H
H ® L H ® L L ® H
READ - WRITE
2st
Cycle
HIDDEN
REFRESH
READ
L
L
H
L
L
X
X
X
ROW COL Data - Out
ROW COL Data - In
L ® H ® L
L ® H ® L
L
WRITE
1
RAS - ONLY REFRESH
CBR REFRESH
H
L
X
H
ROW
X
n/a High - Z
High - Z
X
H ® L
Notes : 1. EARLY WRITE only.
Document :
Rev.
Page4
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
