VSC8601 Datasheet
Revision History
Revision History
This section describes the changes that were implemented in this document. The
changes are listed by revision, starting with the most current publication.
Revision 4.1
Revision 4.1 of this datasheet was published in September 2009. In revision 4.1 of the
document, design considerations were added. For more information, see
Revision 4.0
Revision 4.0 of this datasheet was published in November 2007. The following is a
summary of the changes implemented in the datasheet:
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The VSC8601KN package was removed. VSC8601XKN remains available.
The electrostatic discharge voltage values were added. For charged device model, it
is ±500. For human body model, it is ±1500.
The moisture sensitivity is now specified as level 3.
In the jumbo packet register settings (28E.11:10), the packet lengths were
updated.
In several current consumption specifications, the values for total power at 2.5 V
were corrected. The previous values were slightly elevated.
In the DC characteristics for V
DDIO
at 3.3 V, both the input and output leakage
current parameters (I
ILEAK
and I
OLEAK
) were increased from ±36 µA to ±43 µA.
In the DC characteristics for V
DDIO
at 2.5 V, the minimum input high voltage (V
IH
)
was increased from 1.7 V to 2.0 V. Both the input and output leakage current
parameters (I
ILEAK
and I
OLEAK
) were increased from ±25 µA to ±35 µA.
Current consumption specifications were added for both the power-down mode and
the reset state.
In the AC characteristics for the CLKOUT pin, the duty cycle (%
DUTY
) was modified
from 40% minimum to 44% minimum and from 60% maximum to 56% maximum.
Also, the total jitter (J
CLK
) was raised from 491 ps maximum to 600 ps maximum,
with the qualifier “time interval error” added to the condition.
In the SMI specifications, the MDC rise and fall times were corrected from minimum
values to maximum values.
For the device reset rise time specification, a condition was added that it is
measured from a 10% level to a 90% level.
In the AC characteristics for RGMII uncompensated, the 1000BASE-T duty cycle
(t
DUTY1000
) was separated into two sets of values. In the first set, the values remain
the same, but the added condition is: at room temperature and nominal supply and
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Revision 4.1
September 2009
Page 9
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
