VSC8601 Datasheet
Revision History
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In the Identifier 2 register (address 3), which enables device identification, the
default for bits 9:4 was modified from TBD to 000010.
In the LED Control register (address 27), the name for bits 2 and 1 was corrected
from “link/activity” to simply “activity.”
In the ActiPHY Control (address 20E), bit 5 was reassigned from being reserved to
being the MAC RX_CLK disable parameter.
In the extended PHY control 4 register (address 23E), all the bit settings were
mistakenly omitted. They are now restored.
In the Extended PHY Control 5 register (address 27E), the settings have changed
for bits 8:6 and 5:3 (100BASE-TX and 1000BASE-T transmitter amplitude control).
For bits 8:6 (100BASE-TX), the setting 011 changed from +5 amplitude to
reserved, making bit setting 010 (+4 amplitude) the largest. For bits 5:3
(1000BASE-T), the setting 011 changed from +3 amplitude to reserved, making bit
setting 010 (+2 amplitude) the largest.
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For added clarity, the table that lists device functions and related CMODE pins now
references the associated register and bit for each function.
For the EEPROM Configuration Contents table, some address locations were added
and the introductory text was corrected.
For the DC electrical specifications with VDDIO at 3.3 V and with VDDIO at 2.5 V, an
additional condition was added. The specifications may be considered valid only
when VDDREG = 3.3 V.
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The current consumption specifications were replaced with a new set of
specifications.
In the recommended operating conditions, the minimum and maximum values
were modified for the VDDIOMICRO, VDDIOMAC, and VDD33 parameters at 3.3 V.
For all of these parameters, the minimum changed from 3.13 V to 3.0 V and the
maximum changed from 3.47 V to 3.6 V. The VDDREG parameter was added to the
recommended operating conditions.
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In the stress ratings, a new rating was added for the VDDREG parameter.
An errata section was added.
Revision 2.0
Revision 2.0 of this datasheet was published in December 2005. This was the first
publication of the document.
Revision 4.1
September 2009
Page 12
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
